Energy reversible switching from amorphous metal based nanoelectromechanical switch

A Mayet, CE Smith, MM Hussain - 2013 13th IEEE International …, 2013 - ieeexplore.ieee.org
We report observation of energy reversible switching from amorphous metal based
nanoelectromechanical (NEM) switch. For ultra-low power electronics, NEM switches can be …

Island-style monolithic three-dimensional CMOS-nanoelectromechanical logic circuits

HS Kwon, JW Ko, WY Choi - IEEE Electron Device Letters, 2020 - ieeexplore.ieee.org
Island-style monolithic three-dimensional (M3D) CMOS-nanoelectromechanical (CMOS-
NEM) reconfigurable logic (RL) circuits are experimentally demonstrated showing the full …

Scaling trends of monolithic 3-D complementary metal–oxide–semiconductor nanoelectromechanical reconfigurable logic circuits

JW Ko, G Baek, WY Choi - IEEE Transactions on Electron …, 2020 - ieeexplore.ieee.org
The scaling trends of monolithic 3-D (M3-D) complementary metal–oxide–semiconductor
(CMOS) nanoelectromechanical (NEM) reconfigurable logic (RL) circuits are compared with …

Tri-state nanoelectromechanical memory switches for the implementation of a high-impedance state

G Baek, J Yoon, WY Choi - IEEE Access, 2020 - ieeexplore.ieee.org
Tri-state nanoelectromechanical (NEM) memory switches are proposed for the
implementation of high-impedance state 0 in addition to low-impedance states 1 and 2 for …

[HTML][HTML] Encapsulation of NEM memory switches for monolithic-three-dimensional (M3D) CMOS–NEM hybrid circuits

HC Jo, WY Choi - Micromachines, 2018 - mdpi.com
Considering the isotropic release process of nanoelectromechanical systems (NEMSs),
defining the active region of NEM memory switches is one of the most challenging process …

Nanomechanical switches based on metal-insulator-metal capacitors from a standard complementary-metal-oxide semiconductor technology

JL Muñoz-Gamarra, A Uranga, N Barniol - Applied physics letters, 2014 - pubs.aip.org
We report experimental demonstrations of contact-mode nano-electromechanical switches
obtained using a capacitor module based on metal-insulator-metal configuration of a …

CMOS-MEMS switches based on back-end metal layers

JL Muñoz-Gamarra, G Vidal-Alvarez, F Torres… - Microelectronic …, 2014 - Elsevier
In this work MEMS switches have been developed using a standard CMOS technology
(AMS 0.35 μm technology). With this purpose the back-end metallization layers (based on …

FBFET (feedback field-effect transistor)-based oscillator for neuromorphic computing

C Lee, C Shin - Semiconductor Science and Technology, 2021 - iopscience.iop.org
In this work, we propose a non-linear oscillating circuit using hysteresis characteristics of a
feedback field-effect transistor (FBFET). By varying the device design parameters of FBFET …

A bistable electrostatic silicon nanofin relay for nonvolatile memory application

B Soon, EJ Ng, N Singh, JM Tsai… - Journal of …, 2013 - ieeexplore.ieee.org
We present a nanoelectromechanical (NEM) relay that is capable of demonstrating two
stable states without on-hold power due to the influence of van der Waals force. This is …

A nano-electro-mechanical switch based power gating for effective stand-by power reduction in FinFET technologies

S Saha, US Kumar, MS Baghini… - IEEE Electron Device …, 2017 - ieeexplore.ieee.org
In this letter, we show that using the experimentally demonstrated nano-electro-mechanical-
switches (NEMS) and our design methodology, the standby power dissipation can be …