This paper presents an overview of the recent developments in III–V semiconductor lasers
and detectors operating in the 2–3 μ m wavelength range, which are highly desirable for …

42 VP Gribkovskii crossed electric and magnetic fields. Considerable results have been
obtained in physics of all laser types, all of them are promising for practical application …

We have observed laser action at λ= 3.06 μm in In0. 77Ga0. 23As0. 74Sb0. 26/InP0. 7Sb0. 3
double heterojunction, diode lasers, which were grown by organometallic vapor‐phase …

Lasing has been obtained in the wavelength range 2.7–3.9 μm in double heterostructure
diode lasers with an active region made of InAs alloys. The devices were grown by liquid …

Double-heterostrncture InAsSb/AlAsSb diode lasers emitting at 4 pm have been fabricated.
The laser structure was grown on GaSb substrates by molecular beam epitaxy. The devices …

Tunable laser emission at 2.5 mu m has for the first time been observed in a thulium doped
fluoride fibre laser. With simultaneous laser action at 1.91 mu m, continuous tuning could be …

The solid phase miscibility gap of the In-As-Sb-P pseudo-ternary system has been studied in
the 560–600° C temperature range. InAs 1-xy Sb x P y epilayers were grown by liquid phase …

Pb1− x− y Cd x Sr y S/PbS/Pb1− x− y Cd x Sr y S double‐heterostructure lasers emitting at a
midinfrared wavelength region were fabricated for the first time using molecular beam …

The quaternary alloy InAs1-x-ySbxPy, lattice-matched to InAs, is a promising material for the
production of infrared light sources for the detection of pollutant/nuisance gases in the 2–5 …

An investigation was made into the epitaxial growth and luminescence properties of InAs 1-
xy Sb x P y pn junctions grown by liquid phase epitaxy (LPE). Details of the growth …