Deep radiative levels in InP
H Temkin, BV Dutt, WA Bonner… - Journal of Applied …, 1982 - pubs.aip.org
Photoluminescence studies of InP have previously focussed on the determination of shallow
impurity species visible in the near band-gap region. 1-9 Among the deep radiative …
impurity species visible in the near band-gap region. 1-9 Among the deep radiative …
Large area LPE growth of InGaAsP/InP double heterostructures on InP preserved in a phosphorus ambient
MA DiGiuseppe, H Temkin, WA Bonner - Journal of Crystal Growth, 1982 - Elsevier
Liquid phase epitaxy (LPE) has been used to grow large area (up to 5.4 cm 2) wafers of 1.3
μm In 1-x Ga x As y P 1-y/InP double heterostructures using low dislocation density S-doped …
μm In 1-x Ga x As y P 1-y/InP double heterostructures using low dislocation density S-doped …
A study of the growth of high-purity InGaAs by conventional LPE
TC Penna, MC Tamargo, WL Swartzwelder - Journal of crystal growth, 1984 - Elsevier
We report the study of several parameters which affect background impurity levels in In 0.53
Ga 0.47 As layers grown by LPE, on (100) oriented InP substrates. Net carrier …
Ga 0.47 As layers grown by LPE, on (100) oriented InP substrates. Net carrier …
Growth of InP and InGaAsP (Eg≥ 1.15 eV) layers by liquid phase epitaxy under phosphorus overpressure
VG Keramidas, H Temkin, WA Bonner - Applied Physics Letters, 1982 - pubs.aip.org
The increasing interest in InP-InGaAsP long wavelength emitters and detectors makes
essential the preservation oflnP surface morphology and stoichiometry throughout the …
essential the preservation oflnP surface morphology and stoichiometry throughout the …
The effect of LPE growth atmosphere on thermal decompostion of< 100> S-InP substrates
JA Lourenco - Journal of Crystal Growth, 1982 - Elsevier
A comparison is made between the effect of H 2 and N 2 atmospheres on InP surface
decomposition during melt homogenization in the liquid phase epitaxy (LPE) growth …
decomposition during melt homogenization in the liquid phase epitaxy (LPE) growth …
Heat treatment effects on indium gallium arsenide phosphide double heterostructure material
P Besomi, J Degani, RB Wilson - Journal of applied physics, 1984 - pubs.aip.org
The demand for single mode lasers emitting in the 1.3-pm region for fiber optics
communication has regularly increased in recent years. Buried heterostructures have been …
communication has regularly increased in recent years. Buried heterostructures have been …
[PDF][PDF] Properties of semi-insulating In₀. ₅₃Ga₀. ₄₇As epitaxial layers and photoconductive detectors
MV Rao - 1985 - ir.library.oregonstate.edu
The growth of very high purity undoped and Fe-, Cr-and Zn-doped In0. 53 Ga0. 47As by
liquid phase epitaxy using extended melt-haking schemes has been investigated. The …
liquid phase epitaxy using extended melt-haking schemes has been investigated. The …