The development of information transmission technology towards high-frequency
microwaves and highly integrated and multi-functional electronic devices has been the …

The gate dielectric layer is an essential element of field‐effect transistors (FETs), large area
integrated circuits, and various application electronics. Beyond basic insulation between the …

Metal–organic frameworks (MOFs) offer disruptive potential in micro-and optoelectronics
because of the unique properties of these microporous materials. Nanoscale patterning is a …

The performance of modern chips is strongly related to the multi-layer interconnect structure
that interfaces the semiconductor layer with the outside world. The resulting demand to …

The improved performance of the semiconductor microprocessors was achieved for several
decades by continuous scaling of the device dimensions while using the same materials for …

Over the past decade, the primary focus for improving the performance of nano-electronic
metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) …

Advanced Interconnects: Materials, Processing, and Reliability Page 1 ECS Journal of Solid State
Science and Technology, 4 (1) Y1-Y4 (2015) Y1 JSS Focus Issue ON Advanced Interconnects …

We review the principles of formation, physical properties, and current or envisaged
applications for a wide range of carbon allotropic forms. We discuss experimental and …

Over the past several decades, atomic force microscopy (AFM) has advanced from a
technique used primarily for surface topography imaging to one capable of characterizing a …

This paper presents an in-depth overview of the application and impact of UV/VUV light in
advanced interconnect technology. UV light application in BEOL historically was mainly …