Abstract We synthesized Sb-doped ZnO (ZnO: Sb) microrods with varying Sb content and
carried out a systematic study on their structural, optical and photoluminescent properties …

ZnO nanowires (NWs) are very attractive for a wide range of nanotechnological applications
owing to their tunable electron concentration via structural and surface defect engineering. A …

Recently, methane has been demonstrated as an effective n-type dopant for ZnO thin films
deposited using the RF-magnetron sputtering method. It was shown that the major electrical …

Scanning spreading resistance microscopy (SSRM) is a powerful technique for quantitative
two-and three-dimensional carrier profiling of semiconductor devices with sub-nm spatial …

We explore the capability of scanning tunneling microscopy (STM) and scanning tunneling
spectroscopy (STS) to study nanoscale Si (100) device layers in silicon-on-insulators (SOIs) …

Scanning capacitance microscopy (SCM) was performed on an n-type Si multilayer structure
doped by phosphorus whose concentration ranges from 2× 10 17 to 2× 10 19 cm− 3. Three …

The realization of practical semiconductor nanowire optoelectronic devices requires
controlling their electrical transport properties, which are affected by their large …

This chapter highlights some of the key research in MOCVD (MOVPE) of ZnO and related II‐
VI materials, mainly focusing on the crystal growth experimental work for obtaining layers …

Coaxially periodic ZnO/ZnMgO core-multishell nanowire (NW) heterostructures were grown
via a metal organic chemical vapor deposition method. We investigated their electrical …

We have developed scanning capacitance force microscopy (SCFM) using the dissipative
force in frequency-modulation atomic force microscopy. An SCFM signal depends on the …