An analysis of the strain in an axial nanowire superlattice shows that the dominating strain
state can be defined arbitrarily between unstrained and maximum mismatch strain by …

350 nm and 550 nm thick InGaN/GaN bilayers were irradiated with different energies (from∼
82 to∼ 38 MeV) of xenon (129Xe) ions and different fluences of 1.2 GeV lead (208Pb) ions …

The pump and probe technique in Raman spectroscopy is used to demonstrate the phonon
transport properties of an In 0.05 Ga 0.95 N/GaN heterostructure. The pump laser generates …

In x Al 1− x N films with composition 0.25≤ x≤ 0.86 were grown on p-type Si (111)
substrates by using reactive magnetron co-sputtering technique in an ambient of argon and …

Two I nx A l 1− x N layers were grown simultaneously on different substrates [sapphire
(0001) and the Ga-polar GaN template], but under the same reactor conditions, they were …

Photoacoustic (PA) measurements have been performed on a series of In x Ga 1− x N thin
films grown with x> 50%. In order to illustrate the usefulness of this technique, these …

We investigate the compositional homogeneity of InGaN thin films with a high In content
grown by migration-enhanced plasma-assisted metal-organic chemical vapor deposition …

We have determined the surface acoustic wave velocity in In x Ga 1− x N layers for 0.34< x<
0.75 by means of high resolution Brillouin spectroscopy. The sagittal dependence of the …

A controllable approach to the formation of III-nitride nanocrystalline structures using
hydrothermal assisted method is presented. The structural and morphological properties of …

Dilute-antimonide III-nitrides (Sb< 1%), with their unprecedented and broad range tuning of
bandgap and associated properties, provide extraordinary opportunities for engineering …