Infrared optical responses of wurtzite InxGa1− xN thin films with porous surface morphology
Room temperature infrared (IR) optical responses of wurtzite indium gallium nitride (In x Ga
1− x N) in the composition range of 0.174≤ x≤ 0.883 were investigated by the polarized IR …
1− x N) in the composition range of 0.174≤ x≤ 0.883 were investigated by the polarized IR …
Raman and photoluminescence mapping of InxGa1− xN (x∼ 0.4) at high pressure: optical determination of composition and stress
V Gkrana, K Filintoglou, J Arvanitidis… - Applied Physics …, 2014 - pubs.aip.org
The pressure response of a polar wurtzite In x Ga 1− x N (x= 0.37) film epitaxially grown on a
GaN/sapphire template was studied by means of combined Raman and photoluminescence …
GaN/sapphire template was studied by means of combined Raman and photoluminescence …
INVESTIGATING STRUCTURAL AND OPTICAL CHARACTERISTICS OF III-NITRIDE SEMICONDUCTOR MATERIALS
A comprehensive review is presented by using multiple spectroscopic methods on binary,
ternary and quaternary group III-nitride (GaN, AlN, InN, InGaN and InAlGaN) materials to …
ternary and quaternary group III-nitride (GaN, AlN, InN, InGaN and InAlGaN) materials to …
Raman‐scattering probe of anharmonic effects due to temperature and composition in InGaN
JF Kong, WZ Shen, QX Guo - physica status solidi (b), 2013 - Wiley Online Library
We have carried out a detailed investigation of temperature‐dependent micro‐Raman
scattering on In1− xGaxN films with different Ga compositions (0.06≤ χ≤ 0.91). The …
scattering on In1− xGaxN films with different Ga compositions (0.06≤ χ≤ 0.91). The …
RF-MBE and MOVPE InxGa1-xN films over the entire composition range: A study on growth method dependence
AG Bhuiyan, MS Islam, D Hironaga… - Superlattices and …, 2020 - Elsevier
This paper reports the influence of different growth methods on the In x Ga 1-x N ternary
alloys over the entire composition range. We have successfully fabricated the single …
alloys over the entire composition range. We have successfully fabricated the single …
[PDF][PDF] Gucmann, F.,... Kuzmík, J.(2019). Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD. Journal …
P Chauhan, S Hasenöhrl, E Dobroka, MP Chauvat… - academia.edu
ABSTRACT Two In𝑥Al1− 𝑥N layers were grown simultaneously on different substrates
(sapphire (0001) and Ga-polar GaN template) but under the same reactor conditions were …
(sapphire (0001) and Ga-polar GaN template) but under the same reactor conditions were …
[图书][B] Growth and characterization of InN and In-rich InGaN alloys by migration-enhanced plasma-assisted MOCVD
D Seidlitz - 2019 - search.proquest.com
This thesis investigates and presents the structural and optoelectronic properties of indium
nitride (InN) and indium gallium nitride (InGaN) alloys. Furthermore, this work describes the …
nitride (InN) and indium gallium nitride (InGaN) alloys. Furthermore, this work describes the …
High-pressure Raman scattering in InGaN heteroepitaxial layers: Effect of the substrate on the phonon pressure coefficients
We perform high-pressure Raman-scattering measurements on different In x Ga 1-x N/Si
(111) epilayers (0.19< x< 0.45). We find that the experimental pressure coefficient of the A 1 …
(111) epilayers (0.19< x< 0.45). We find that the experimental pressure coefficient of the A 1 …
Local heat energy transport analyses in gallium-indium-nitride/gallium nitride Heterostructure by microscopic Raman imaging exploiting simultaneous irradiation of …
S Okamoto, N Saito, K Ito, B Ma… - International …, 2020 - asmedigitalcollection.asme.org
Local heat transport in two GaxIn1-xN/GaN-heterostructures on sapphire substrates is
investigated by microscopic Raman imaging using two lasers of 532 nm (Raman …
investigated by microscopic Raman imaging using two lasers of 532 nm (Raman …
Temperature Dependence of Surface Acoustic Wave Propagation Velocity in InxGa1-xN Films Obtained by High-Resolution Brillouin Spectroscopy: Determination of …
RJJ Riobóo, C Prieto, R Cusco, L Artús… - Applied Physics …, 2013 - iopscience.iop.org
Temperature-dependent surface acoustic wave (SAW) propagation velocity and temperature
coefficient of frequency (TCF) have been determined for the first time in In x Ga 1-x N alloys …
coefficient of frequency (TCF) have been determined for the first time in In x Ga 1-x N alloys …