Control of the emission wavelength of gallium nitride-based nanowire light-emitting diodes
M Wölz - 2013 - edoc.hu-berlin.de
Semiconductor nanowires are investigated as a building block for light-emitting diodes
(LEDs). Conventional gallium nitride (GaN) LEDs contain several crystal films grown on …
(LEDs). Conventional gallium nitride (GaN) LEDs contain several crystal films grown on …
[图书][B] Study of Thick Indium Gallium Nitride Graded Structures for Future Solar Cell Applications
MA Aldawsari - 2021 - search.proquest.com
Indium gallium nitride (In x Ga 1-x N) materials have held great potential for the
optoelectronic industry due to their electrical and optical properties. The tunable band gap …
optoelectronic industry due to their electrical and optical properties. The tunable band gap …
Multiphononon resonant Raman scattering in He+-implanted InGaN
N Domènech-Amador, R Cuscó… - Semiconductor …, 2014 - iopscience.iop.org
We present Raman-scattering measurements on InGaN epilayers with In content ranging
from 17% to 42% which have been implanted with different He+ doses. Raman spectra …
from 17% to 42% which have been implanted with different He+ doses. Raman spectra …
Structural, optical and electronic properties of low energy N ion implanted InGaN/GaN heterostructures
The structural, optical, morphological and electrical properties of the low energy N ion
implanted InGaN/GaN heterostructures have been investigated. These heterostructures …
implanted InGaN/GaN heterostructures have been investigated. These heterostructures …
PA-MBE Growth and Characterization of Nitride Semiconductors, from InGaN Thin-films to GaN and AlN Self-assembled Nanowires
M Azadmand - 2019 - boa.unimib.it
In this thesis the Plasma-Assisted Molecular Beam Epitaxy (PA-MBE) growth and
characteristics of different families of III-N semiconductors are discussed. The two main …
characteristics of different families of III-N semiconductors are discussed. The two main …
Polarized infrared reststrahlen features of wurtzite ingan thin film
P Yew, LS Cheong, NS Shiong, YT Leong… - Materials Science …, 2016 - Trans Tech Publ
Polarized infrared (IR) reflectance measurement was carried out to investigate the optical
phonon modes of wurtzite structure In0. 92Ga0. 08N thin film grown by molecular beam …
phonon modes of wurtzite structure In0. 92Ga0. 08N thin film grown by molecular beam …
[PDF][PDF] High pressure Raman and PL study of InxGa1-xN
V Gkrana, K Filintoglou, J Arvanitidis, D Christofilos… - fsk30.materials.uoc.gr
The direct bandgap of the InxGa1-xN alloys ranging from UV to NIR renders these materials
suitable for short wavelength laser diodes and photovoltaic devices. Raman and …
suitable for short wavelength laser diodes and photovoltaic devices. Raman and …
[引用][C] Carolina F. Cerqueira, Bartolomeu C. Viana b, c, Cleanio da Luz-Lima b, Nestor Perea-Lopez c, Mauricio Terrones c, Eduardo HL Falcão d, Anderson SL …
R Chassagnon, AL Pinto, LC Sampaio, M Sacilotti - Journal of Crystal Growth, 2015