The electronic band structure of highly mismatched alloys (HMAs) was very successfully
explored using electromodulation (EM) spectroscopy, ie, photoreflectance (PR) …

Influence of barrier material and structure on carrier quantum confinement in GaAsBi
quantum wells (QWs) is studied comprehensively. Single-and multi-QW structures were …

The GaAsBiN denoted highly mismatched alloy is among the new material that has drawn
attention regarding its special physical properties. The co-alloying of GaAs by simultaneous …

In this work, the optoelectronic properties of the getchellite crystal, a layered semiconducting
disordered alloy with the chemical formula AsSbS 3, are probed by a combination of …

The temperature-dependent transport properties of n-type InGaAsBi epitaxial alloys with
various doping densities are investigated by conducting magnetoresistance (MR) and Hall …

As a highly mismatched alloy class, dilute bismuthide materials exhibit strong valence band-
Bi impurity state interactions, leading to large bandgap bowing parameters and strong spin …

BGaAs layers with boron concentrations of 4.1%, 7.4%, and 12.1% are grown by molecular
beam epitaxy on a GaP substrate and studied by optical absorption and photoreflectance …

This paper presents a methodological analysis of the gap energy temperature dependence
of GaAsBi, GaSbBi, InSbBi, and InAsBi. The temperature dependence of the gap energy in …

We studied the electroluminescence (EL) properties of an optically pumped GaAsBi–GaAs
heterojunction p–i–n diode. GaAsBi–GaAs quantum well excitonic transitions dominate the …

The low solid solubility of Bi in III-V semiconductors complicates achieving high Bi
incorporation in those films. Crystalline orientation is often overlooked as a parameter that …