BACKGROUND Semiconductor materials feature optical and electronic properties that can
be engineered through their composition and crystal structure. The use of semiconductors …

Nanocrystals (NCs) are one of the few nanotechnologies to have attained mass market
applications with their use as light sources for displays. This success relies on Cd-and In …

Due to thermal carriers generated by a narrow mid-infrared energy gap, cooling is always
necessary to achieve ideal photodetection. In quantum dot (QD), the electron thermal …

HgTe colloidal quantum dots (CQDs) are promising absorber systems for infrared detection
due to their widely tunable photoresponse in all infrared regions. Up to now, the best …

Improving charge mobility in quantum dot (QD) films is important for the performance of
photodetectors, solar cells and light-emitting diodes. However, these applications also …

Extreme miniaturization of infrared spectrometers is critical for their integration into next-
generation consumer electronics, wearables and ultrasmall satellites. In the infrared, there is …

PbS QDs/a‐IGZO based sensitized photo field‐effect transistors are promising candidate for
next‐generation near‐infrared photodetectors due to their ultra‐high sensitivity, gate …

Commercial infrared (IR) photodetectors based on epitaxial growth inorganic
semiconductors, eg InGaAs and HgCdTe, suffer from high fabrication cost, poor compatibility …

In this work, a room-temperature mixed-phase ligand exchange method is developed to
obtain a relatively high carrier mobility (∼ 1 cm2/(V s)) on HgSe intraband colloidal quantum …

Silicon-based complementary metal oxide semiconductor (CMOS) devices have dominated
the technological revolution in the past decades. With increasing demands in machine …