A 28-GHz bidirectional active Gilbert-cell mixer in 90-nm CMOS
A bidirectional active mixer based on Gilbert-cell topology is proposed and realized in 90-
nm CMOS at 28 GHz. The offered mixer can achieve both the up-and down-conversion …
nm CMOS at 28 GHz. The offered mixer can achieve both the up-and down-conversion …
A 23-28 GHz pHEMT MMIC low-noise amplifier for satellite-cellular convergence applications
Satellite-cellular convergence promises to enable higher millimetre-wave bandwidth (data
rate); beamformed better signal alignment (higher system efficiency); multi-connectivity …
rate); beamformed better signal alignment (higher system efficiency); multi-connectivity …
A Compact SiGe Stacked Common-Base Dual-Band PA With 20/18.8 dBm Psat at 36/64 GHz Supporting Concurrent Modulation
Z Liu, EA Karahan, K Sengupta - IEEE Microwave and Wireless …, 2022 - ieeexplore.ieee.org
This work presents a compact, concurrent dual-band (36/64 GHz) linear power amplifier in
90 nm SiGe technology. To simultaneously overcome the gain and power limitation of …
90 nm SiGe technology. To simultaneously overcome the gain and power limitation of …
Simultaneous amplitude-and phase-tunable coupler with wide phase tuning range
BW Xu, SY Zheng, Y Li, W Che - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
In this article, a coupler with simultaneously tunable power division ratio (PDR) and phase
difference is proposed based on a multivector summation method. Two groups of varactor …
difference is proposed based on a multivector summation method. Two groups of varactor …
Multi-Band Millimeter-Wave Circuits for Spectrum Aggregation in B5G Era: A Tutorial
J Wen, R Wang, X Wang, W Sun… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
Multi-band millimeter-wave (mm-wave) circuits are crucial for achieving high speed, high
efficiency, flexible networking, and reducing hardware costs in mm-wave communication …
efficiency, flexible networking, and reducing hardware costs in mm-wave communication …
AKa-Band Transformer-Based Switchless Bidirectional PA-LNA in 90-nm CMOS Process
TY Chiu, Y Wang, H Wang - 2021 IEEE MTT-S International …, 2021 - ieeexplore.ieee.org
This paper presents a switchless bidirectional power amplifier-low noise amplifier (PA-LNA)
in 90-nm CMOS process for millimeter-wave (mm-wave) phased-array front-end chip. This …
in 90-nm CMOS process for millimeter-wave (mm-wave) phased-array front-end chip. This …
A Band-Shifting Millimeter-Wave T/R Front-End Using Inductance-Mutation Transformer Technique for Multi-Band Phased-Array Transceivers
This article introduces a band-shifting transmit/receive (T/R) front-end (FE) using the
inductance-mutation technique for multiband phased-array transceivers. The proposed …
inductance-mutation technique for multiband phased-array transceivers. The proposed …
Realizing Joint Communication and Sensing RF Receiver Front-ends-A Survey
Joint Communication and radio Sensing (JC&S) has gained significant attention over the
past few years. The advantages of this technology include reduced cost, size and power …
past few years. The advantages of this technology include reduced cost, size and power …
AK/Ka-band switchless reconfigurable 65 nm CMOS LNA based on suspended substrate coupled line
This article presents a K/Ka (18-40) GHz dual-band switch-free reconfigurable 65nm CMOS
Low-Noise Amplifier (LNA) realized by inter-stage and output-stage Suspended-Substrate …
Low-Noise Amplifier (LNA) realized by inter-stage and output-stage Suspended-Substrate …
Wideband 3-D-Printed chip interconnects for DC-millimeter wave applications
Wide band and low-loss interconnects for millimeter wave applications are discussed in this
work. The focus is to avoid using conventional techniques such as bond wires and solder …
work. The focus is to avoid using conventional techniques such as bond wires and solder …