The Understanding and Compact Modeling of Reliability in Modern Metal–Oxide–Semiconductor Field-Effect Transistors: From Single-Mode to Mixed-Mode …

Z Sun, S Chen, L Zhang, R Huang, R Wang - Micromachines, 2024 - mdpi.com
With the technological scaling of metal–oxide–semiconductor field-effect transistors
(MOSFETs) and the scarcity of circuit design margins, the characteristics of device reliability …

Logical Resolving-Based Methodology for Efficient Reliability Analysis

Z Tang, C Li, H You, X Liu, Y Wang, Y Dai, G Bai, X Lin - Micromachines, 2023 - mdpi.com
With the CMOS technology downscaling to the deep nanoscale, the aging effects of devices
degrade circuit performance and even lead to functional failure. The stress analysis is critical …

A Reliability Investigation of VDMOS Transistors: Performance and Degradation Caused by Bias Temperature Stress

E Živanović, S Veljković, N Mitrović, I Jovanović… - Micromachines, 2024 - mdpi.com
This study aimed to comprehensively understand the performance and degradation of both
p-and n-channel vertical double diffused MOS (VDMOS) transistors under bias temperature …