Etching substrates using ale and selective deposition
Methods of and apparatuses for processing substrates having carbon-containing material
using atomic layer deposition and selective deposition are provided. Methods involve …
using atomic layer deposition and selective deposition are provided. Methods involve …
Dry plasma etch method to pattern MRAM stack
S Tan, KIM Taeseung, W Yang, J Marks… - US Patent 10,374,144, 2019 - Google Patents
Methods of etching metal by depositing a material reactive with a metal to be etched and a
halogen to form a volatile species and exposing the substrate to a halogen-containing gas …
halogen to form a volatile species and exposing the substrate to a halogen-containing gas …
Designer atomic layer etching
KJ Kanarik - US Patent 10,566,212, 2020 - Google Patents
Methods for evaluating synergy of modification and removal operations for a wide variety of
materials to determine process conditions for self-limiting etching by atomic layer etching are …
materials to determine process conditions for self-limiting etching by atomic layer etching are …
Atomic layer etch, reactive precursors and energetic sources for patterning applications
Methods and apparatuses for patterning carbon-containing material over a layer to be
etched are provided herein. Methods involve trimming carbon-containing material by atomic …
etched are provided herein. Methods involve trimming carbon-containing material by atomic …
Eliminating yield impact of stochastics in lithography
Methods and apparatuses for performing cycles of aspect ratio dependent deposition and
aspect ratio independent etching on lithographically patterned substrates are described …
aspect ratio independent etching on lithographically patterned substrates are described …
Integrating atomic scale processes: ALD (atomic layer deposition) and ale (atomic layer etch)
KJ Kanarik, J Marks, H Singh, S Tan… - US Patent …, 2019 - Google Patents
Methods are provided for integrating atomic layer etch and atomic layer deposition by
performing both processes in the same chamber or reactor. Methods involve sequentially …
performing both processes in the same chamber or reactor. Methods involve sequentially …
Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces
Methods and apparatuses for etching semiconductor material on substrates using atomic
layer etching by chemisorption, by deposition, or by both chemisorption and deposition …
layer etching by chemisorption, by deposition, or by both chemisorption and deposition …
Selective deposition with atomic layer etch reset
Methods are provided for conducting a deposition on a semiconductor substrate by
selectively depositing a material on the substrate. The substrate has a plurality of substrate …
selectively depositing a material on the substrate. The substrate has a plurality of substrate …
Atomic layer deposition and etch in a single plasma chamber for critical dimension control
Methods and apparatuses for critical dimension (CD) control of substrate features using
integrated atomic layer deposition (ALD) and etch processes are described herein. Methods …
integrated atomic layer deposition (ALD) and etch processes are described herein. Methods …
Cobalt etch back
Methods of etching cobalt on substrates are provided. Some methods involve exposing the
substrate to a boron-containing halide gas and an additive, and exposing the substrate to an …
substrate to a boron-containing halide gas and an additive, and exposing the substrate to an …