The progressively decreasing feature size of the circuit components has tremendously
increased the need for the global surface planarization of the various thin film layers that …

Over the past decade, the primary focus for improving the performance of nano-electronic
metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) …

Recent trends in the microelectronics industry are requiring the growth of metallic first row
transition metal films by the atomic layer deposition (ALD) method. The ALD growth of noble …

The wet‐oxidation of a single crystal Cu (111) foil is studied by growing single crystal
graphene islands on it followed by soaking it in water. 18O‐labeled water is also used; the …

This paper presents an in-depth overview of the application and impact of UV/VUV light in
advanced interconnect technology. UV light application in BEOL historically was mainly …

The atomic layer deposition (ALD) of Cu metal films was carried out by a two-step process
with Cu (OCHMeCH2NMe2) 2 and BH3 (NHMe2) on Ru substrates and by a three-step …

Treatment of MCl2 (M= Cr, Mn, Fe, Co, Ni) with 2 equiv of lithium metal and 1, 4-di-tert-butyl-
1, 3-diazadiene (tBu2DAD) in tetrahydrofuran at ambient temperature afforded Cr …

Copper (Cu) thin films have been widely used as electrodes and interconnection wires in
integrated electronic circuits and more recently as substrates for the synthesis of graphene …

The results of the DC magnetron sputtering of copper thin films with different parameters of
deposition are presented. The main aim of studies was to determine the influence of current …

Nanomultilayers are complex architectures of materials stacked in sequence with layer
thicknesses in the nanometer range. Their application in microelectronics is challenged by …