Plasma etching is a critical process for the realization of high performance in the next
generation of CMOS devices. To predict and control fluctuations in the etching properties …

Plasmas have been widely utilized to pattern various materials, from metals to
semiconductors and oxides to polymers, for a vast array of applications. The interplay …

Atomic-or nanometer-scale roughness on feature surfaces has become an important issue
to be resolved in the fabrication of nanoscale devices in industry. Moreover, in some cases …

Feature profiles of Si etched in HBr-containing plasmas have been analyzed through a
comparison between experiments and simulations. The emphasis was placed on a …

Atomic-or nanometer-scale surface roughening and rippling during Si etching in high-
density Cl 2 and Cl 2/O 2 plasmas have been investigated by developing a three …

A three-dimensional atomic-scale cellular model (ASCeM-3D) has been developed to
reproduce the evolution of feature profiles on atomic or nanometer scale during plasma …

Since the onset of pattern transfer technologies for chip manufacturing, various strategies
have been developed to circumvent or overcome aspect ratio dependent etching (ARDE) …

Abstract Two ultraviolet photons (250–282 nm) excited atomic bromine, Br (4 p 5 2 PJ; J=
1/2, 3/2), to the terms built from the 4p 4 5p electronic configuration. Through visible and …

Classical molecular dynamics (MD) simulations have been performed for Cl+ and Br+ ions
incident on Si (100) surfaces with Cl and Br neutrals, respectively, to gain a better …

Classical molecular dynamics (MD) simulations have been performed for SiCl x+(x= 0–4)
ions incident on Si (100) surfaces, using an improved Stillinger–Weber (SW) potential form …