Colloidal quantum dots (QDs) emitting in the infrared (IR) are promising building blocks for
numerous photonic, optoelectronic and biomedical applications owing to their low-cost …

InAs/GaAs superlattices with ultra-thin InAs (few monolayer) were grown on GaAs
substrates. Nucleation of InAs occurs in a two-dimensional or a three-dimensional way …

Indium arsenide is a direct gap semiconductor (0.36 eV at 300 K and 0.40 eV at 77 K) with
high electron mobility (greater than 20 000 cm 2 Vt-1 s− 1 at 300 K and approximately 60 …

We report the investigation of the early stages (0–15 monolayers) of the InAs MBE growth on
(001) GaAs under As-stabilized growth conditions using surface techniques and …

This paper reports detailed surface phase diagrams for (100) GaAs and (100) InAs. In the
case of GaAs, growth rates from 0.07 to 3.0 μm/h, As 4: Ga flux ratios from 0.25: 1 to 100: 1 …

Nondestructive optical methods, based on measurements of the'plasma edge'and the Moss-
Burstein shift, are investigated as contactless alternatives to Hall measurements for …

The electrical quality of InAs films grown on GaAs substrates by MBE is found to be optimum
for growth temperatures close to 490 degrees C. The Hall mobility for such samples is 80000 …

Carbon incorporation in III-V ternary alloys,(AlGa) As,(AlIn) As and (GaIn) As, for the entire
composition range is investigated using solid-source molecular beam epitaxy. On the binary …

We demonstrate a low threading dislocation density (TDD) and smooth surface InAs layer
epitaxially grown on Si by suppressing phase separation of In x Al 1− x As (x= 0 to 1) graded …

As a precursor to investigating the growth of In x Ga 1− x As on Si, a series of 2.8±0.2 μ m
thick films of various compositions (x= 0, 0.13, 0.56 and 1.0) have been deposited by …