Transferring porous layer from InP wafer based on the disturbance

Y Zhang, L Cao, X Chai, K Liang, Y Han… - … Measurement on the …, 2016 - ieeexplore.ieee.org
We present a new method to transfer the three dimensional (3D) porous layer from InP wafer
based on the disturbance, during electrochemical etching of n-InP (100) with …

[图书][B] Demonstration of functional III-V photovoltaic cell via processing of porous Ge substrates

N Alkurd - 2019 - search.proquest.com
Substrate reuse technologies focus on reducing photovoltaic device costs via substrate
utilization over multiple devices. The three common substrate reuse strategies include …

[HTML][HTML] Computational modeling of the size effects on the optical vibrational modes of H-terminated Ge nanostructures

A Trejo, M Cruz-Irisson - Molecules, 2013 - mdpi.com
The vibrational dispersion relations of porous germanium (pGe) and germanium nanowires
(GeNWs) were calculated using the ab initio density functional perturbation theory with a …

Control of mesoporous silicon initiation by cathodic passivation

F Blaffart, A Boucherif, V Aimez, R Arès - Electrochemistry communications, 2013 - Elsevier
We demonstrate that cathodic polarization is an effective method for in-situ control of surface
morphology in the fabrication of mesoporous silicon. The cathodic currents are applied on …

[PDF][PDF] Kerfless wafering approach with Si and Ge templates for Si, Ge and III-V epitaxy

C Weiss, W Schreiber, M Drießen… - Presented at the 37th …, 2020 - ise.fraunhofer.de
We work on the transfer from CZ wafers to epitaxially grown Si and Ge wafers on reusable
substrates with a porous detachment layer (“kerfless wafering”) to reduce material and …

III-V Multi-Junction Solar Cells on Si Substrates with a Voided Ge Interface Layer: A Modeling Study

MN Beattie, YA Bioud, A Boucherif… - 2018 IEEE 7th World …, 2018 - ieeexplore.ieee.org
Multi-junction solar cell efficiencies far exceed those attainable with silicon photovoltaics;
however, the high cost of materials remains a barrier to their widespread use. Substantial …

III-V Epitaxy on Detachable Porous Germanium 4” Substrates

W Schreiber, J Ohlmann, P Schygulla… - 2023 IEEE 50th …, 2023 - ieeexplore.ieee.org
Porous germanium multiple layer stacks were prepared using bipolar electrochemical
etching. In dependance of the porosity within the individual porous layers they can be used …

[PDF][PDF] Materials Today Advances

T Hanuš, B Ilahi, A Chapotot, H Pelletier, J Cho… - 2023 - researchgate.net
abstract Semiconductor-based freestanding membranes (FSM) have recently emerged as a
highly promising area of advanced materials research. Their unique properties, such as …

Quasi-monocrystalline Ge as an interface layer for multi-junction solar cells on Si substrates: Electrical resistivity and device modelling

MN Beattie, DG Hobson, CE Valdivia… - 2017 Photonics …, 2017 - ieeexplore.ieee.org
Quasi-monocrystalline germanium (QMC Ge) is investigated for potential applications in
high-efficiency, low-cost multi-junction solar cell design. The morphology and electrical …

[PDF][PDF] Tecnologias alternativas para fabricação de células solares de elevada eficiência com redução de custo e consumo de Ge

AA Quivy - 2022 - maxwell.vrac.puc-rio.br
Resumo Winter da Costa, Edgard; Souza, Patrícia. Tecnologias alternativas para fabricação
de células solares de elevada eficiência com redução de custo e consumo de Ge. Rio de …