This paper describes an approach for the reduction of plasma-induced damage in self-
assembly based porous ultra low-k organosilica dielectrics. The concept is based on …

Flexible low dielectric constant (low-k) SiCOH thin films were fabricated onto flexible indium
tin oxide coated polyethylene naphthalate (ITO/PEN) substrates using plasma-enhanced …

The effect of the replacement of Si–O–Si by Si–CH2–Si groups on the mechanical and
electrical properties of silica-based hybrid sol–gel thin films is reported. For a reliable …

SiOCH ULK films with k-value from 2.5 to 2.1 and porosity from 24 to 40% were etched in
CHF 3, CHF 3+ Ar, CF 4 and CF 4+ Ar plasmas at+ 15...− 120 C with and without bias being …

Ellipsometric porosimetry (EP) experiments are performed to obtain the adsorption
isotherms of water, methanol, and toluene on pristine and damaged SiOCH porous …

This study describes the damage caused by physical vapor deposition of TaN/Ta barriers on
porous self-assembled organosilica low-k dielectrics for IC applications. It is demonstrated …

Historically, the integration of insulators with decreasing dielectric constants, k, has been
critical in improving devices performance. The most efficient approach to decrease k is by …

As of today, plasma damage remains as one of the main challenges to the reliable
integration of porous low-k materials into microelectronic devices at the most aggressive …

Analytical expressions describing ion-induced sputter or etch processes generally relate the
sputter yield to the surface atomic binding energy (U sb) for the target material. While …

A porous ultra low-κ dielectric (pULK) and a dense SiCOH dielectric were investigated
before and after a plasma treatment with argon in terms of the change in the bonding types …