The integration of porous organo-silicate low-k materials has met a lot of technical
challenges. One of the main issues is plasma-induced damage, occurring for all plasma …

The integration of porous dielectric (low-k) in interconnects of integrated circuits is limited by
the damage induced by plasma processes to the porous material. Plasma-damaged …

The PhD research has been an integral and substantial part of my life for many years. These
were years filled with exciting experiments, thrilling ideas and hypotheses, thought …

In this study we demonstrate an approach for reduction of plasma induced damage in spin-
on organosilica low-k dielectric films. These films are deposited from sols containing …

As semiconductor devices advance and their constituent components become closer
together, the issue of resistance-capacitance (RC) delay arises. To combat RC delay in the …

We have investigated the fabrication process of an alternative approach for a direct
integration of epitaxial structures onto a foreign substrate. Our approach is based on the …

Mesoporous inorganic thin films represent a field of research with growing importance in
applications such as sensing, optics, photovoltaic cells and protective coatings. Block …

Silica-based porous materials are utilized as an antireflective, antifogging and
superhydrophobic coating on solar cells [1, 2], interlayer and intermetal dielectrics in …

Porous low-k materials used as insulator for interconnection levels in CMOS devices, are
easily damaged during the patterning processes. Pore size characterization after material …

Ultra-low-k (ULK) dielectrics are a class of insulating materials that act to minimize
capacitance in microelectronic circuits. ULKs are distinguished from ordinary low-k …