Group III-V semiconductors as promising nonlinear integrated photonic platforms

K Vyas, DHG Espinosa, D Hutama, SK Jain… - … in Physics: X, 2022 - Taylor & Francis
Group III–V semiconductors are based on the elements of groups III and V of the periodic
table. The possibility to grow thin-films made of binary, ternary, and quaternary III–V alloys …

AlGaAs nonlinear integrated photonics

E Mobini, DHG Espinosa, K Vyas, K Dolgaleva - Micromachines, 2022 - mdpi.com
Practical applications implementing integrated photonic circuits can benefit from nonlinear
optical functionalities such as wavelength conversion, all-optical signal processing, and …

Post-2000 nonlinear optical materials and measurements: data tables and best practices

N Vermeulen, D Espinosa, A Ball… - Journal of Physics …, 2023 - iopscience.iop.org
In its 60 years of existence, the field of nonlinear optics has gained momentum especially
over the past two decades thanks to major breakthroughs in material science and …

Test bed for all-optical universal JK flip-flop (FF) and master-slave JK FF using ripple ring resonator (RRR) with Z-domain mathematical pedestal, and its application as …

K Singh, S Mandal - Optik, 2022 - Elsevier
All-optical universal JK flip-flop (FF) is designed and demonstrated using ripple ring
resonator (RRR). Four InGaAsP-InP optical microring resonators (OMRRs) are used to …

Tunable four-wave mixing in AlGaAs waveguides of three different geometries

DHG Espinosa, KM Awan, M Odungide… - Optics …, 2021 - Elsevier
The AlGaAs material platform has been intensively used to develop nonlinear photonic
devices on-a-chip, thanks to its superior nonlinear optical properties. We propose a new …

Numerical investigation of on-chip wavelength conversion based on InP/In1− xGaxAsyP1− y semiconductor waveguide platforms

J Wen, K Li, Y Gong, B Copner, B Hughes… - Optics …, 2020 - Elsevier
We design the high confinement InP/In 1− x Ga x As y P 1− y semiconductor waveguides
and investigate the effective wavelength conversion based on this platform. Efficient …

Systematic study of InP/InGaAsP heated plasma etching and roughness improvement for integrated optical devices

K Vyas, KM Awan, K Dolgaleva - … of Vacuum Science & Technology B, 2023 - pubs.aip.org
Indium Phosphide (InP) is one of the most widely commercialized III–V semiconductor
materials for making efficient lasers operating in the O-band and C-band. It is also gaining …

Self-phase modulation in single CdTe nanowires

C Xin, J Zhang, P Xu, Y Xie, N Yao, N Zhou, X Guo… - Optics …, 2019 - opg.optica.org
We measure the transmission of near-infrared ps pulses through single CdTe nanowires.
Benefitting from the strong light confinement and large effective nonlinearity of these …

基于InP/In_ (1-x) Ga_xAs_yP_ (1-y) 加载条状波导的宽带波长转换数值研究

文进, 何晨瑶, 秦韦俊, 孙伟, 梁伯植, 熊科宇, 张辉… - 2022 - ir.opt.ac.cn
摘要族半导体波导平台在实现主动和被动器件单片集成上有自身的优势, 同时基于Ⅲ-Ⅴ
族材料的波长转换器可以通过非线性效应扩展波长范围. 设计了一种基于In P/In 1-x Ga x As y P …

Fabrication and error analysis of a InGaAsP/InP polarization beam splitter based on an asymmetric Mach-Zehnder interferometer

P Pan, J Wen, S Zha, X Cai, H Ma, J An - Optical Materials, 2021 - Elsevier
A polarization beam splitter (PBS) based on an asymmetrical Mach-Zehnder interferometer
(MZI) is experimentally demonstrated on a InP platform. The experimental results show that …