From tandem solar cell we expect a wide absorption range due to different bandgaps of the
subcells, higher open circuit voltage V oc and finally better photo conversion efficiency η …

In this work, we demonstrate the beneficial effect of post-growth rapid thermal annealing
(RTA) on the performance of~ 1 eV GaAsSbN-based solar cells. Different configurations of …

Lattice-matched Ge 1− x− y Si x Sn y (x≤ 0.2, y≤ 0.05) alloys were deposited defect-free on
Ge (001) substrates via low-temperature (330–290 C) reactions of Ge 4 H 10, Si 4 H 10 and …

This paper reports on pin photodiode frequency response optimization based on In x Ga 1-x
As 1-y N y quaternary lattice matched to GaAs. Two transparent layers are placed on p-side …

This work presents an investigation of the fully strained GaAsN/GaAs heterostructures
obtained by atmospheric pressure metalorganic vapor phase epitaxy, focusing on the …

In this work, we have studied solar cells based on AlGaInAs/InP quaternary structure to
describe the behavior of electronics components. To this end, we have developed a …

We investigate the optical and electrical characteristics of GaInNAs/GaAs long-wavelength
photodiodes grown under varying conditions by molecular beam epitaxy and subjected to …

This work focuses on modeling and simulation of structure based semiconductors III. V for
solar cell application. We first studied the influence of the concentration of indium on the …

In this work, we demonstrate the dependence of the nitrogen incorporation on the Ga/In
content into (In, Ga)(As, N) quantum dots (QDs) grown on GaAs (100) by radio-frequency …

Current technology for the light detection in telecommunication revolves around InGaAs
based on InP substrates. However, there is interest in switching to GaAs substrates to take …