Impacts on access resistance of InP high electron mobility transistors from wafer processing

R Ma, J Lapointe, C Storey, P Poole, F Jiang… - Journal of Vacuum …, 2020 - pubs.aip.org
In this work, the authors evaluated the access resistance of InP high electron mobility
transistors (HEMTs) and their degradation during wafer processing. The transfer resistance …

The growth of resonant tunneling hot electron transistors using chemical beam epitaxy

WL Chen, GO Munns, L Davis, PK Bhattacharya… - Journal of crystal …, 1994 - Elsevier
A systematic growth study of InGaAs/AlAs/InGaAsP resonant tunneling hot electron
transistors (RHETs) was performed using chemical beam epitaxy (CBE). The resonant …

Factors influencing the purity of electronic grade phosphine delivered to MOCVD tools

J Feng, M Owens, MW Raynor - Journal of crystal growth, 2010 - Elsevier
Increasing mobility of InP films with usage time of one PH3 cylinder prompted an
investigation into factors influencing the purity of delivered PH3. The presence of …

Resonant-tunneling triangular-barrier optoelectronic switch by gas source molecular beam epitaxy

H Sakata, K Utaka, Y Matsushima - Journal of crystal growth, 1995 - Elsevier
We report a novel optical bistable device, resonant-tunneling triangular-barrier
optoelectronic switch (R-TOPS), which consists of a double-barrier resonant-tunneling diode …

[图书][B] High performance indium phosphide based electronic devices grown by chemical beam epitaxy

GO Munns - 1997 - search.proquest.com
INFORMATION TO USERS Page 1 INFORMATION TO USERS This manuscript has been
reproduced from the microfilm master. UMI films the text directly from the original or copy …

High-Frequency Microelectronics

GI Haddad - Ann Arbor, 1998 - apps.dtic.mil
By any measure of productivity and impact this program has been highly productive and has
had a major impact on III-V semiconductor technology as evidenced by the number of …