InP membrane integrated photonics research

Y Jiao, N Nishiyama, J Van Der Tol… - Semiconductor …, 2020 - iopscience.iop.org
Recently a novel photonic integration technology, based on a thin InP-based membrane, is
emerging. This technology offers monolithic integration of active and passive functions in a …

Advanced integration techniques on broadband millimeter-wave beam steering for 5G wireless networks and beyond

Z Cao, Q Ma, AB Smolders, Y Jiao… - IEEE journal of …, 2015 - ieeexplore.ieee.org
Recently, the desired very high throughput of 5G wireless networks drives millimeter-wave
(mm-wave) communication into practical applications. A phased array technique is required …

Low-temperature bonding for silicon-based micro-optical systems

Y Qin, MMR Howlader, MJ Deen - Photonics, 2015 - mdpi.com
Silicon-based integrated systems are actively pursued for sensing and imaging applications.
A major challenge to realize highly sensitive systems is the integration of electronic, optical …

Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

P Giri, P Chakrabarti - Superlattices and Microstructures, 2016 - Elsevier
Abstract Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using
magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In …

Sub-milliampere threshold operation of butt-jointed built-in membrane DFB laser bonded on Si substrate

D Inoue, J Lee, T Hiratani, Y Atsuji, T Amemiya… - Optics express, 2015 - opg.optica.org
We fabricated GaInAsP/InP waveguide-integrated lateral-current-injection (LCI) membrane
distributed feedback (DFB) lasers on a Si substrate by using benzocyclobutene (BCB) …

[HTML][HTML] Scaling photonic integrated circuits with InP technology: A perspective

Y Wang, Y Jiao, K Williams - APL Photonics, 2024 - pubs.aip.org
The number of photonic components integrated into the same circuit is approaching one
million, but so far, this has been without the large-scale integration of active components …

Fullerene-assisted electron-beam lithography for pattern improvement and loss reduction in InP membrane waveguide devices

Y Jiao, J Pello, AM Mejia, L Shen, B Smalbrugge… - Optics letters, 2014 - opg.optica.org
In this Letter, we present a method to prepare a mixed electron-beam resist composed of a
positive resist (ZEP520A) and C_60 fullerene. The addition of C_60 to the ZEP resist …

20 Gbps operation of membrane-based GaInAs/InP waveguide-type p–i–n photodiode bonded on Si substrate

Z Gu, D Inoue, T Amemiya, N Nishiyama… - Applied Physics …, 2018 - iopscience.iop.org
A GaInAs/InP waveguide-type p–i–n membrane photodetector is shown to be a strong
candidate for on-chip optical interconnection. A responsivity of 0.95 A/W is estimated for a …

Effective role of filling fraction control in p-type CexFe3CoSb12 skutterudite thermoelectric materials

SH Bae, KH Lee, SM Choi - Intermetallics, 2019 - Elsevier
Abstract p-type Ce-filled Fe 4-x Co x Sb 12 skutterudite is a promising thermoelectric
material with high thermal-to-electric conversion efficiency at mid-to-high temperatures …

Monolithic integration of membrane-based butt-jointed built-in DFB lasers and pin photodiodes bonded on Si substrate

D Inoue, T Hiratani, Y Atsuji, T Tomiyasu… - IEEE Journal of …, 2015 - ieeexplore.ieee.org
We demonstrate a monolithic integration of lateral-current-injection (LCI)-type membrane-
based distributed-feedback (DFB) lasers and pin-photodiodes (PDs) using a butt-jointed …