Silicon nitride spacer etching realization is considered today as one of the most challenging
of the etch process for the new devices realization. For this step, the atomic etch precision to …

InGaZnO (IGZO)-based thin-film transistors and selector diodes are increasingly investigated
for a broad range of applications such as high-resolution displays, high-density memories …

To surmount the continuous scaling challenges of MOSFET devices, FinFETs have emerged
as the real alternative for use as the next generation device for IC fabrication technology …

The etch characteristics of silicon trenches masked with various SiO 2/Si 3 N 4 pattern
distances were investigated using synchronously and asynchronously pulse modes in …

The ability to achieve atomic layer etch precision is reviewed in detail for a variety of material
sets and implementation methods. For a cyclic approach most similar to a reverse ALD …

Two classic radio-frequency (RF) plasmas, ie, the capacitively and the inductively coupled
plasmas (CCP and ICP), are widely employed in material processing, eg, etching and thin …

Phase resolved optical emission spectroscopy (PROES) measurements were combined with
measurements of the optical emission intensity (OEI) and electrical characteristics (RF …

The effect of the pulse-off duration on the time evolution of the plasma and electrical
parameters during the ignition phase in a pulsed capacitively coupled radio frequency argon …

In order to develop very high energy (> 1 MeV) neutral beam injection systems for
applications, such as plasma heating in fusion devices, it is necessary first to develop high …

This work investigates the physical, chemical, and mechanical properties of coir-coconut
husk powder reinforced low-density polyethylene composites exposed to an aggressive …