The time-resolved characteristics of pulsed inductively coupled O 2/Ar plasmas have been
investigated in this paper, by means of a Langmuir probe and a global model. The plasma …

Comparisons between measurements and spatially-averaged (0D) simulations of low-
pressure Ar and Cl 2 pulsed-plasmas in an industrial inductively coupled reactor are …

The performance of low-k nitride spacer etch processes for fin-field effect transistor device
fabrication was investigated using C 4 H 9 F based and CH 3 F based plasma gas …

Transient plasmas (such as pulsed power plasmas) can be of interest to both industry,
where they allow for new processing windows, and basic science, where their dynamics are …

To achieve the etching of silicon nitride spacers with a perfect anisotropy and an almost
infinite selectivity, an alternative method consisting of two sequential steps—surface …

To elucidate the pulsed fluorocarbon plasma behavior, a surface-wave probe with high time
resolution was used to measure the electron density ne in the afterglow of plasma. In a dual …

The time variation of the plasma parameters along with their spatial distributions were
measured in pulse-modulated (PM) inductively coupled argon plasma via the phase delay …

Electron temperature is measured from time resolved hairpin resonator probe
measurements in a pulsed capacitively coupled argon plasma at 400 mTorr. Effective …

The mechanism of highly selective etching of Si 3 N 4 by a pulsed-microwave electron-
cyclotron-resonance plasma was investigated by analyzing surface-reaction layers formed …

Plasma etching has long enabled the perpetuation of Moore's Law. Today, etch
compensation helps to create devices that are smaller than 20 nm. But, with the constant …