Ignition delay of a pulsed inductively coupled plasma (ICP) in tandem with an auxiliary ICP

L Liu, S Sridhar, VM Donnelly… - Journal of Physics D …, 2015 - iopscience.iop.org
Plasma ignition delays were observed in a'main'inductively coupled plasma (ICP), in tandem
with an'auxiliary'ICP. The Faraday-shielded ICPs were separated by a grounded metal grid …

Use of plasma process diagnostic sensors for the monitoring of in situ dry cleaning of plasma enhanced chemical vapor deposition chamber

YM You, JS Lee, MH Kim, SJ Hong - Journal of Vacuum Science & …, 2024 - pubs.aip.org
A potential source of particle contamination due to poorly maintained PECVD chamber
condition forces to perform in situ dry cleaning also actively employed before the wet …

Surface analysis of polysilicon gate etching by pulsed-microwave plasma

M Matsui, M Morimoto, N Ikeda… - Japanese Journal of …, 2014 - iopscience.iop.org
The mechanism of highly selective etching by a pulsed-microwave electron-cyclotron-
resonance plasma was investigated by analyzing surface-reaction layers formed on …

Measurement of localized plasma perturbation with hairpin resonator probes

K Ford, DJ Peterson, J Brandon, SK Nam… - Physics of …, 2019 - pubs.aip.org
In situ plasma diagnostics present the classical problem of the scientific measurement: how
does one accurately measure a system without also perturbing it? The uncertainty in the …

[HTML][HTML] Electron energy distributions and electron impact source functions in Ar/N2 inductively coupled plasmas using pulsed power

MD Logue, MJ Kushner - Journal of Applied Physics, 2015 - pubs.aip.org
In plasma materials processing, such as plasma etching, control of the time-averaged
electron energy distributions (EEDs) in the plasma allows for control of the time-averaged …

Relationship between formation of surface-reaction layers and flux of dissociated species in C4F8/Ar plasma for SiO2 etching using pulsed-microwave plasma

M Matsui, T Usui, H Yasunami, T Ono - Journal of Vacuum Science & …, 2016 - pubs.aip.org
The mechanism of highly selective etching of SiO 2 using pulsed-microwave electron-
cyclotron-resonance plasma was investigated by analyzing the relationship between plasma …

Silicon nitride spacer etching selectively to silicon using CH3F/O2/He/SiCl4 plasma

N Possémé, M Garcia-Barros, C Arvet… - Journal of Vacuum …, 2020 - pubs.aip.org
Using CH 3 F/O 2/He based chemistries in high density plasmas for silicon nitride spacer
etching, loss of silicon in active source/drain regions of CMOS transistors can be observed …

Phase shift effects of radio-frequency bias on ion energy distribution in continuous wave and pulse modulated inductively coupled plasmas

C Xue, F Gao, YX Liu, J Liu, YN Wang - Chinese Physics B, 2018 - iopscience.iop.org
A retarding field energy analyzer (RFEA) is used to measure the time-averaged ion energy
distributions (IEDs) on the substrate in both continuous wave (CW) and synchronous pulse …

Electron density modulation in a pulsed dual-frequency (2/13.56 MHz) dual-antenna inductively coupled plasma discharge

N Sirse, A Mishra, GY Yeom… - Journal of Vacuum Science …, 2016 - pubs.aip.org
The electron density, ne, modulation is measured experimentally using a resonance hairpin
probe in a pulsed, dual-frequency (2/13.56 MHz), dual-antenna, inductively coupled plasma …

[HTML][HTML] Physical and technological analysis of the AlGaN-based UVC-LED: An extended discussion focused on cubic phase as an alternative for surface disinfection

HI Solís-Cisneros, CA Hernández-Gutiérrez… - Revista mexicana de …, 2022 - scielo.org.mx
Crisis in coronavirus times requires understanding the effects on society and establishing
efficient mechanisms to prevent infections. The disinfection of personal protection equipment …