[HTML][HTML] Novel dilute bismide, epitaxy, physical properties and device application
Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least
studied III-V compound semiconductor and has received steadily increasing attention since …
studied III-V compound semiconductor and has received steadily increasing attention since …
First-principles calculations of bismuth induced changes in the band structure of dilute Ga–V–Bi and In–V–Bi alloys: chemical trends versus experimental data
MP Polak, P Scharoch… - … Science and Technology, 2015 - iopscience.iop.org
Bi-induced changes in the band structure of Ga–V–Bi and In–V–Bi alloys are calculated
within the density functional theory (DFT) for alloys with Bi≤ 3.7% and the observed …
within the density functional theory (DFT) for alloys with Bi≤ 3.7% and the observed …
Temperature dependence of band gaps in dilute bismides
WM Linhart, R Kudrawiec - Semiconductor Science and …, 2018 - iopscience.iop.org
Abstract Knowledge about the temperature dependence of the fundamental band-gap
energy of semiconductors is very important and constitutes the basis for developing …
energy of semiconductors is very important and constitutes the basis for developing …
[HTML][HTML] High Bi content GaSbBi alloys
The epitaxial growth, structural, and optical properties of GaSb 1–x Bi x alloys have been
investigated. The Bi incorporation into GaSb is varied in the range 0< x≤ 9.6% by varying …
investigated. The Bi incorporation into GaSb is varied in the range 0< x≤ 9.6% by varying …
[HTML][HTML] Bi-induced band gap reduction in epitaxial InSbBi alloys
The properties of molecular beam epitaxy-grown InSb 1− x Bi x alloys are investigated.
Rutherford backscattering spectrometry shows that the Bi content increases from 0.6% for …
Rutherford backscattering spectrometry shows that the Bi content increases from 0.6% for …
GaSbBi/GaSb quantum well laser diodes
We report on the structural and optical properties of GaSbBi single layers and GaSbBi/GaSb
quantum well heterostructures grown by molecular beam epitaxy on GaSb substrates …
quantum well heterostructures grown by molecular beam epitaxy on GaSb substrates …
Molecular beam epitaxy and characterization of high Bi content GaSbBi alloys
The epitaxial growth, structural and optical properties of GaSb 1− x Bi x layers are reported.
The incorporation of Bi into GaSb is varied in the 0< x⩽ 14% range by varying the growth …
The incorporation of Bi into GaSb is varied in the 0< x⩽ 14% range by varying the growth …
Engineering of highly mismatched alloy with semiconductor and semi-metallic substituent's for photovoltaic applications
Highly mismatched alloys (HMAs) are getting a substantial interest of researchers because
of holding competence of rapid change in physical properties with minor compositional …
of holding competence of rapid change in physical properties with minor compositional …
Theoretical and experimental studies of electronic band structure for GaSb1− xBix in the dilute Bi regime
Photoreflectance (PR) spectroscopy was applied to study the band gap in GaSb 1− x Bi x
alloys with Bi< 5%. Obtained results have been interpreted in the context of ab initio …
alloys with Bi< 5%. Obtained results have been interpreted in the context of ab initio …
Carrier recombination dynamics and temperature dependent optical properties of InAs–GaSb heterostructures
MK Hudait, SW Johnston, M Meeker… - Journal of Materials …, 2022 - pubs.rsc.org
Heterostructures with two dissimilar materials could offer unprecedented properties if one
can carefully synthesize these heterostructures with atomically smooth interfaces and …
can carefully synthesize these heterostructures with atomically smooth interfaces and …