Influence of thermal treatment on the near-infrared broadband luminescence of Bi: CsI crystals
X Fan, L Su, G Ren, X Jiang, H Xing, J Xu… - Optical Materials …, 2013 - opg.optica.org
Near-infrared (NIR) emitting active centers can exist abundant in Bi: CsI crystal. In addition,
Bi: CsI have the simplest crystal structure, body-centered cubic (BCC). In this paper …
Bi: CsI have the simplest crystal structure, body-centered cubic (BCC). In this paper …
Study on photoluminescence of thermally treated Bi12GeO20 and Mo:Bi12GeO20 crystals
PS Yu, LB Su, HL Tang, X Guo, HY Zhao… - Science China …, 2011 - Springer
Abstract Photoluminescence (PL) of Bi 12 GeO 20 and Mo doped Bi 12 GeO 20 (Mo: Bi 12
GeO 20) crystals in visible and near-infrared (NIR) spectral regions were studied. X-ray …
GeO 20) crystals in visible and near-infrared (NIR) spectral regions were studied. X-ray …
Influence of femtosecond pulsed laser irradiation on bismuth germanium oxide single crystal properties
A KovaĿeviĿ, JL RistiĿ-DjuroviĿ, M LekiĿ… - Materials Research …, 2016 - Elsevier
High quality bismuth germanium oxide single crystals were irradiated by a femtosecond
pulsed laser beam of increasing power. Analyses performed on irradiated and unirradiated …
pulsed laser beam of increasing power. Analyses performed on irradiated and unirradiated …
[PDF][PDF] Improvement of magneto-optical quality of high purity Bi 12 GeO 20 single crystal induced by femtosecond pulsed laser irradiation
Bismuth germanium oxide (Bi12GeO20) from the sillenite group of cubic crystals is
commonly abbreviated as BGO or s-BGO. Due to its fitting optical characteristics, such as …
commonly abbreviated as BGO or s-BGO. Due to its fitting optical characteristics, such as …
退火处理对W: Bi_4Ge_3O_ (12) 和Bi_ (12) GeO_ (20) 晶体发光性能的影响
俞平胜， 苏良碧， 唐慧丽， 郭鑫， 赵衡煜， 杨秋红， 徐军 - 发光学报, 2011 - cqvip.com
通过提拉法制备了W∶ Bi4Ge3O12 和Bi12GeO20 晶体, 测试了晶体的吸收光谱,
光致发光谱和发光衰减时间等. W∶ Bi4Ge3O12 的可见光发光强度比纯Bi4Ge3O12 有所增强 …
光致发光谱和发光衰减时间等. W∶ Bi4Ge3O12 的可见光发光强度比纯Bi4Ge3O12 有所增强 …
Spectroscopic properties of OH− doped and Bi-rich Bi4Ge3O12 crystals by vertical Bridgman method
P Yu, L Su, H Zhao, X Guo, H Li, Q Yang, J Xu - Journal of luminescence, 2011 - Elsevier
OH− doped and Bi-rich Bi 4 Ge 3 O 12 (BGO) single crystals were grown by Vertical
Bridgman (VB) method. The structure of these crystals was determined by XRD, and the …
Bridgman (VB) method. The structure of these crystals was determined by XRD, and the …
Propriedades Dieléctricas de Materiais Porosos com Incorporação de Micro e Nanopartículas
JH da Silva Monteiro - 2003 - search.proquest.com
Compactos porosos obtidos a partir de microesferas de vidro apresentam espaços vazios
de geometria bem definida e uma estreita distribuição do tamanho de poro. Encontram …
de geometria bem definida e uma estreita distribuição do tamanho de poro. Encontram …