The cracking behaviour of PH3, TBP and DitBuPH, AsH3 and TBAs was studied by mass
spectrometry in a production-type MOMBE growth chamber. The measurements were …

Metalorganic chemical vapor deposition was used to grow unintentionally doped GaAs
epitaxial layers and compare the properties of arsine-and tertiarybutylarsine-grown layers …

We report on the chemical synthesis, thermal decomposition studies and the first low
pressure MOVPE growth experiments for a new class of metalorganic As compounds …

High‐speed, 80‐μm‐diam, GaAs/Al x Ga1− x As p‐i‐n photodiodes having frequency
response in excess of 7 GHz and internal quantum efficiency approaching 100% were …

The close-spaced vapor transport (CSVT) technique is used to grow GaAs epitaxial layers
from various n-or p-type doped GaAs sources. The transport agent is H, O with PHzo= 4.58 …

We report the first demonstration of metal‐semiconductor field‐effect transistors (MESFETs)
made from GaAs structures grown with an alkylarsine source, tertiarybutylarsine (t‐BuAsH2) …

The adsorption and surface reactions of trimethylgallium and tertiarybutylarsine on GaAs
(100) surfaces have been investigated by Fourier transform infrared spectroscopy. Adsorbed …

We report the observation of 2 p 0,− 1, 2 s 0, 3 d− 1,− 2, 3 p− 1, and 4 f− 3 structures in the
''two electron''satellite photoluminescence of excitons bound to the (hydrogenic) shallow …

Tertiarybutylarsine was used in the growth of GaAs and AIGaAs by metalorganic chemical
vapor deposition over a range of compositions and V IIIl ratios. GaAs layers were obtained …

Models for the chemical kinetics of the growth of GaAs by using triethylgallium and
trimethylgallium with trimethylarsene, triethylarsene, tert-butylarsine, and phenylarsine are …