Metalorganic vapor-phase epitaxy (MOVPE) has become a well-established technique for
the epitaxial growth of layers of III–V compound semiconductors since its introduction in …

The decomposition of trivinylantimony (TVSb) was studied in an atmospheric pressure flow
tube reactor, with D2 and He as carrier gases. The products were analyzed by a time-of …

OMVPE of compound semiconductors Page 384 THIN FILM PROCESSES ll Ill-2 OMVPE of
Compound Semiconductors Thomas F. Kuech University of Wisconsin Department of Chemical …

The synthesis of tert-butylarsine-d2 from tert-butylarsenic dichloride and LiAlD4 is described.
No resonances at 2.65 ppm (from AsH2) are observed in the NMR spectrum, indicating the …

To assess the suitability of alternative arsenic compounds for device applications,
development of growth procedures for controlled nand p doping are required. In this paper …

Gas phase and surface decomposition reactions of a novel arsenic precursor tris-
(dimethylamino) arsenic (DMAAs) have been studied. Optical fiber-based Fourier transform …

GaInAs was grown by atmospheric-pressure MOVPE using tertiarybutylarsine in place of
arsine. Its carbon content was low and its carrier density and mobility were 2× 1015cm-3and …

The novel β-hydride eliminating trialkyl-As compounds diethyl-tertiarybutyl-As (DEtBAs) and
diethyl-isopropyl-As (DEiPrAs) has been used as less toxic substitutes for AsH 3 for both …

The pyrolysis mechanisms of dimethylarsine (DMAsH) have been studied mass
spectrometrically in an atmospheric pressure flow tube reactor. In either the D 2 or He …

The performance characteristics of epitaxial structures suitable for optoelectronic and
electronic devices were investigated. These were fabricated by MOVPE using tertiary …