Recent advances in Si-compatible nanostructured photodetectors
R Douhan, K Lozovoy, A Kokhanenko, H Deeb, V Dirko… - Technologies, 2023 - mdpi.com
In this review the latest advances in the field of nanostructured photodetectors are
considered, stating the types and materials, and highlighting the features of operation …
considered, stating the types and materials, and highlighting the features of operation …
Lasing in Group-IV materials
Silicon photonics in the near-IR, up to 1.6 µm, is already one of key technologies in optical
data communications, particularly short range. It also is being prospected for applications in …
data communications, particularly short range. It also is being prospected for applications in …
Enhanced indirect-to-direct inter-valley scattering in germanium under tensile strain for improving the population of electrons in direct valley
SH Huang, QQ Zheng, WM Xie, JY Lin… - Journal of Physics …, 2018 - iopscience.iop.org
A theoretical model is proposed to analyze the inter-valley electron transferring between
direct Γ and indirect L valleys, which sheds light on the electron conduction dynamics in (0 0 …
direct Γ and indirect L valleys, which sheds light on the electron conduction dynamics in (0 0 …