The gate injection-based field-effect synapse transistor with linear conductance update for online training

S Seo, B Kim, D Kim, S Park, TR Kim, J Park… - Nature …, 2022 - nature.com
Neuromorphic computing, an alternative for von Neumann architecture, requires synapse
devices where the data can be stored and computed in the same place. The three-terminal …

Energy-efficient Mott activation neuron for full-hardware implementation of neural networks

S Oh, Y Shi, J Del Valle, P Salev, Y Lu, Z Huang… - Nature …, 2021 - nature.com
To circumvent the von Neumann bottleneck, substantial progress has been made towards in-
memory computing with synaptic devices. However, compact nanodevices implementing …

DNN+ NeuroSim V2. 0: An end-to-end benchmarking framework for compute-in-memory accelerators for on-chip training

X Peng, S Huang, H Jiang, A Lu… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
DNN+ NeuroSim is an integrated framework to benchmark compute-in-memory (CIM)
accelerators for deep neural networks, with hierarchical design options from device-level, to …

MoS2 Synapses with Ultra-low Variability and Their Implementation in Boolean Logic

A Krishnaprasad, D Dev, SS Han, Y Shen, HS Chung… - ACS …, 2022 - ACS Publications
Brain-inspired computing enabled by memristors has gained prominence over the years due
to the nanoscale footprint and reduced complexity for implementing synapses and neurons …

Self-selective multi-terminal memtransistor crossbar array for in-memory computing

X Feng, S Li, SL Wong, S Tong, L Chen, P Zhang… - ACS …, 2021 - ACS Publications
Two-terminal resistive switching devices are commonly plagued with longstanding scientific
issues including interdevice variability and sneak current that lead to computational errors …

In-memory learning with analog resistive switching memory: A review and perspective

Y Xi, B Gao, J Tang, A Chen, MF Chang… - Proceedings of the …, 2020 - ieeexplore.ieee.org
In this article, we review the existing analog resistive switching memory (RSM) devices and
their hardware technologies for in-memory learning, as well as their challenges and …

Photoferroelectric all-van-der-Waals heterostructure for multimode neuromorphic ferroelectric transistors

M Soliman, K Maity, A Gloppe… - … Applied Materials & …, 2023 - ACS Publications
Interface-driven effects in ferroelectric van der Waals (vdW) heterostructures provide fresh
opportunities in the search for alternative device architectures toward overcoming the von …

Sparse reram engine: Joint exploration of activation and weight sparsity in compressed neural networks

TH Yang, HY Cheng, CL Yang, IC Tseng… - Proceedings of the 46th …, 2019 - dl.acm.org
Exploiting model sparsity to reduce ineffectual computation is a commonly used approach to
achieve energy efficiency for DNN inference accelerators. However, due to the tightly …

Artificial Synapse Based on a 2D-SnO2 Memtransistor with Dynamically Tunable Analog Switching for Neuromorphic Computing

CH Huang, H Chang, TY Yang, YC Wang… - … Applied Materials & …, 2021 - ACS Publications
A new type of two-dimensional (2D) SnO2 semiconductor-based gate-tunable memristor,
that is, a memtransistor, an integrated device of a memristor and a transistor, was …

Reconfigurable 2D WSe2‐Based Memtransistor for Mimicking Homosynaptic and Heterosynaptic Plasticity

G Ding, B Yang, RS Chen, WA Mo, K Zhou, Y Liu… - Small, 2021 - Wiley Online Library
The mimicking of both homosynaptic and heterosynaptic plasticity using a high‐performance
synaptic device is important for developing human‐brain–like neuromorphic computing …