Bi-induced changes in the band structure of Ga–V–Bi and In–V–Bi alloys are calculated
within the density functional theory (DFT) for alloys with Bi≤ 3.7% and the observed …

Surfaces of semiconducting materials excited by femtosecond laser pulses emit
electromagnetic waves in the terahertz (THz) frequency range, which by definition is the 0.1 …

Abstract Knowledge about the temperature dependence of the fundamental band-gap
energy of semiconductors is very important and constitutes the basis for developing …

A series of strained GaAsBi/GaAs multiple quantum well diodes are characterised to assess
the potential of GaAsBi for photovoltaic applications. The devices are compared with …

The study made in this paper is directed towards the tuning of the parameters responsible
for the shift in optical properties of a novel type-II D-QW (double quantum well) …

Deep-level defects in n-type GaAs1− x Bi x having 0≤ x≤ 0.023 grown on GaAs by
molecular beam epitaxy at substrate temperature of 378° C have been injvestigated by deep …

The electronic band structure and material gain have been calculated for GaAsBi/GaAs
quantum wells (QWs) with various bismuth concentrations (Bi≤ 15%) within the 8-band and …

The electronic band structure of highly mismatched alloys (HMAs) was very successfully
explored using electromodulation (EM) spectroscopy, ie, photoreflectance (PR) …

A comprehensive assessment of the nature of the distribution of sub band-gap energy states
in bulk GaAsBi is presented using power and temperature dependent photoluminescence …

GaAs/GaAsBi coaxial multishell nanowires were grown by molecular beam epitaxy.
Introducing Bi results in a characteristic nanowire surface morphology with strong …