Ultrathin Sb2Se3 Nanowires for Polarimetric Imaging Photodetectors with a High Signal/Noise Ratio
S Zhang, H Wang, MM Kirchner, J Liu… - Advanced Materials …, 2022 - Wiley Online Library
This work presents a study on the optical applications of chemical vapor deposition‐grown
Sb2Se3 nanowires in polarized single nanowire photodetectors. High‐quality Sb2Se3 …
Sb2Se3 nanowires in polarized single nanowire photodetectors. High‐quality Sb2Se3 …
Nanofabrication of III–V semiconductors employing diblock copolymer lithography
TF Kuech, LJ Mawst - Journal of Physics D: Applied Physics, 2010 - iopscience.iop.org
To fully exploit the potential advantages of ideal quantum dots (QDs)(ie full 3D carrier
confinement), elimination of the wetting layer and a uniform monomodal QD size distribution …
confinement), elimination of the wetting layer and a uniform monomodal QD size distribution …
SnSe nanoplates for photodetectors with a high signal/noise ratio
In this work, we report a study on two-dimensional SnSe nanoplates grown by chemical
vapor deposition and their applications in single nanoplate photodetectors with a high …
vapor deposition and their applications in single nanoplate photodetectors with a high …
Ultra-long high quality catalyst-free WO3 nanowires for fabricating high-performance visible photodetectors
This work presents a study on the controlled growth of WO 3 nanowires via chemical vapor
deposition without catalyst, and their potential applications in visible photodetectors. The …
deposition without catalyst, and their potential applications in visible photodetectors. The …
Controlled growth of high-quality Bi2S3 nanowires and their application in near-infrared photodetection
A study on the chemical vapor deposition growth of monocrystalline Bi 2 S 3 nanowires and
their applications in near-infrared polarized photodetectors are reported. High-quality Bi 2 S …
their applications in near-infrared polarized photodetectors are reported. High-quality Bi 2 S …
Tuning the growth properties of Ge quantum dot lattices in amorphous oxides by matrix type
M Buljan, M Jerčinović, Z Siketić… - Journal of applied …, 2013 - journals.iucr.org
Self-assembled growth of Ge quantum dot lattices in oxide matrices prepared by the quite
simple magnetron sputtering deposition method allows the preparation of a variety of …
simple magnetron sputtering deposition method allows the preparation of a variety of …
Influence of bimodal distribution and excited state emission on photoluminescence spectra of InAs self-assembled quantum dots
Optical properties of self-assembled quantum dots (SAQDs) samples were investigated
through photoluminescence (PL) with variation of temperature and excitation density. Two …
through photoluminescence (PL) with variation of temperature and excitation density. Two …
Fabrication of In (P) As quantum dots by interdiffusion of p and as on InP (311) B substrate
K Akahane, A Matsumoto, T Umezawa, N Yamamoto - Crystals, 2020 - mdpi.com
Herein, we report on our investigation of a fabrication scheme for self-assembled quantum
dots (QDs), which is another type of Stranski–Krastanow (S–K) growth mode. The In (P) As …
dots (QDs), which is another type of Stranski–Krastanow (S–K) growth mode. The In (P) As …
Tuning the structural and optical characteristics of heterogeneously coupled InAs Submonolayer (SML) quantum dots grown on InAs Stranski-Krastanov (SK) quantum …
A complete investigation on the strain and structural properties of the heterogeneously
coupled InAs Submonolayer (SML) on InAs Stranski-Krastanov (SK) quantum dot (QD) …
coupled InAs Submonolayer (SML) on InAs Stranski-Krastanov (SK) quantum dot (QD) …
Enhanced photoluminescence efficiency of mid-infrared InAsSb nanostructures using a carrier blocking layer
This paper presents a study on the emission efficiency enhancement of InAsSb
nanostructures using a carrier blocking layer. InP is proposed to serve as the carrier …
nanostructures using a carrier blocking layer. InP is proposed to serve as the carrier …