Advances in AFM for the electrical characterization of semiconductors

RA Oliver - Reports on Progress in Physics, 2008 - iopscience.iop.org
Atomic force microscopy (AFM) is a key tool for nanotechnology research and finds its
principal application in the determination of surface topography. However, the use of the …

Electrical scanning probe microscopy: Investigating the inner workings of electronic and optoelectronic devices

SB Kuntze, D Ban, EH Sargent… - Critical Reviews in …, 2005 - Taylor & Francis
Semiconductor electronic and optoelectronic devices such as transistors, lasers, modulators,
and detectors are critical to the contemporary computing and communications infrastructure …

[HTML][HTML] Direct nanoscale imaging of evolving electric field domains in quantum structures

RS Dhar, SG Razavipour, E Dupont, C Xu… - Scientific reports, 2014 - nature.com
The external performance of quantum optoelectronic devices is governed by the spatial
profiles of electrons and potentials within the active regions of these devices. For example …

Microscopic Basis for the Mechanism of Carrier Dynamics in an Operating Junction Examined by Using Light-Modulated Scanning Tunneling Spectroscopy

S Yoshida, Y Kanitani, R Oshima, Y Okada… - Physical review …, 2007 - APS
The doping characteristics and carrier transport in a GaAs pn junction were visualized with
a∼ 10 nm spatial resolution, using light-modulated scanning tunneling spectroscopy. The …

Cross-sectional scanning tunneling microscopy of biased semiconductor lasers

RJ Cobley, KS Teng, MR Brown, SP Wilks - Journal of Applied Physics, 2007 - pubs.aip.org
Cross-sectional scanning tunneling microscopy is applied to semiconductor lasers which
are biased and producing light. Two device structures are investigated—a double quantum …

SDVSRM-a new SSRM based technique featuring dynamically adjusted, scanner synchronized sample voltages for measurement of actively operated devices

S Doering, A Wachowiak, H Roetz, S Eckl, T Mikolajick - Ultramicroscopy, 2018 - Elsevier
Scanning spreading resistance microscopy (SSRM) with its high spatial resolution and high
dynamic signal range is a powerful tool for two-dimensional characterization of …

Nanometer Probing of Operating Nano-Photonic Devices

RS Dhar - 2014 - uwspace.uwaterloo.ca
The external performance of quantum optoelectronic devices is governed by the three-
dimensional profiles of electric potentials determined by the distribution of charge carriers …

Probing the Inner Workings of Quantum Photonic Devices

D Ban - Optoelectronic Devices and Integration, 2019 - opg.optica.org
Scanning probe microscopy, including scanning spreading resistance microscopy, scanning
capacitance microscopy and scanning voltage microscopy (SVM), is a novel and enabling …

Direct observation of electron overbarrier leakage in actively driven buried heterostructure multi-quantum-well lasers

D Ban, EH Sargent - Photonics North 2004: Optical …, 2004 - spiedigitallibrary.org
We have developed a new scanning probe microscopy-based technique, scanning
differential spreading resistance microscopy (SDSRM) and applied it to profile the free …

On the ideality factor of the GaAlAs semiconductor diode below knee voltage

SB Ota, S Ota - Modern Physics Letters B, 2007 - World Scientific
ON THE IDEALITY FACTOR OF THE GaAlAs SEMICONDUCTOR DIODE BELOW KNEE
VOLTAGE Page 1 Final Reading August 15, 2007 10:29 WSPC/147-MPLB 01360 Modern …