SB Kuntze, D Ban, EH Sargent… - Critical Reviews in …, 2005 - Taylor & Francis
Semiconductor electronic and optoelectronic devices such as transistors, lasers, modulators, and detectors are critical to the contemporary computing and communications infrastructure …
The external performance of quantum optoelectronic devices is governed by the spatial profiles of electrons and potentials within the active regions of these devices. For example …
S Yoshida, Y Kanitani, R Oshima, Y Okada… - Physical review …, 2007 - APS
The doping characteristics and carrier transport in a GaAs pn junction were visualized with a∼ 10 nm spatial resolution, using light-modulated scanning tunneling spectroscopy. The …
Cross-sectional scanning tunneling microscopy is applied to semiconductor lasers which are biased and producing light. Two device structures are investigated—a double quantum …
S Doering, A Wachowiak, H Roetz, S Eckl, T Mikolajick - Ultramicroscopy, 2018 - Elsevier
Scanning spreading resistance microscopy (SSRM) with its high spatial resolution and high dynamic signal range is a powerful tool for two-dimensional characterization of …
The external performance of quantum optoelectronic devices is governed by the three- dimensional profiles of electric potentials determined by the distribution of charge carriers …
D Ban - Optoelectronic Devices and Integration, 2019 - opg.optica.org
Scanning probe microscopy, including scanning spreading resistance microscopy, scanning capacitance microscopy and scanning voltage microscopy (SVM), is a novel and enabling …
D Ban, EH Sargent - Photonics North 2004: Optical …, 2004 - spiedigitallibrary.org
We have developed a new scanning probe microscopy-based technique, scanning differential spreading resistance microscopy (SDSRM) and applied it to profile the free …