Free 3D shaping with grey-tone lithography and multidose e-beam writing

M Kalus, M Frey, LM Buchmann, K Reimer… - Microelectronic …, 1998 - Elsevier
3D-resist structures are realized by grey-tone lithography and directly by e-beam writing in a
multiple dose regime. The effect of these lithographic techniques on the surface roughness …

Experimental study of microcylindrical lenses fabricated using focused-ion-beam technology

Y Fu, NKA Bryan - Journal of Vacuum Science & Technology B …, 2001 - pubs.aip.org
A new alternative manufacturing method using focused-ion-beam (FIB) technology is
introduced in detail in this article. Fabrication of microcylindrical lenses can be realized …

基于电子束光刻的LIGA 技术研究

孔祥东, 张玉林, 魏守水 - 微细加工技术, 2004 - cqvip.com
提出了基于电子束的LIGA (Líthographíe, Galvanoformung, Abformung) 技术新概念.
根据Grune 公式就电子束能量对抗蚀剂刻蚀深度的影响进行了理论分析, 并在SDS-2 …

RIE lag in diffractive optical element etching

JH Ting, JC Su, S Su - Microelectronic engineering, 2000 - Elsevier
In this study, the pattern of a 4 mm diameter diffractive optical element with linewidth ranging
from 12 to 0.5 μm was adopted. With the SiO2 layer as the etch hard mask, silicon was …

Focused ion beam machining and deposition

Y Fu, L Wang - Ion Beams in Nanoscience and Technology, 2009 - Springer
The focused ion beam (FIB) technique was developed mainly during the late 1970s and the
early 1980s. The first commercial instruments were introduced more than a decade ago [1] …

Process latitude enhancement for 3D structure formation in e-beam lithography

VA Kudryashov, VV Krasnov, PD Prewett… - Microelectronic …, 1997 - Elsevier
Investigation of the positive resist dissolution process under low-energy e-beam exposure
has given rise to a new technology of 3D structure formation. This technology has a higher …

用反差确定电子束曝光剂量与刻蚀深度的关系

卢文娟, 张玉林, 孔祥东, 郝慧娟 - 强激光与粒子束, 2007 - cqvip.com
为了精确地确定电子束曝光剂量与刻蚀深度间的关系, 根据抗蚀剂的灵敏度曲线,
采用反差经验公式来确定剂量与刻蚀深度间的关系. 选用正性抗蚀剂PMMA 进行曝光实验 …