Physical mechanism of Zn and Te doping process of In0. 145Ga0. 855As0. 108Sb0. 892 quaternary alloys
M Ramírez-López, JJ Cruz-Bueno… - Materials Science in …, 2024 - Elsevier
We investigated p-and n-type In 0.145 Ga 0.855 As 0.108 Sb 0.892 semiconductor alloys
grown on GaSb (100) substrates by the liquid phase epitaxy (LPE) technique with different …
grown on GaSb (100) substrates by the liquid phase epitaxy (LPE) technique with different …