Electromigration (EM) is one of the key concerns going forward for interconnect reliability in
integrated circuit (IC) design. Although analog designers have been aware of the EM …

Electromigration is increasingly relevant to the physical design of electronic circuits. It is
caused by excessive current density stress in the interconnect. The ongoing reduction of …

The electromigration effect within current-density-stressed signal and power lines is an
ubiquitous and increasingly important reliability and design problem in sub-micron IC …

Electromigration (EM) is becoming a progressively intractable design challenge due to
increased interconnect current densities. It has changed from something designers" should" …

Electromigration due to excessive current density stress in the interconnect can cause the
premature failure of an electronic circuit. The ongoing reduction of circuit feature sizes has …

Electromigration (EM) is becoming a progressively severe reliability challenge due to
increased interconnect current densities. A shift from traditional (post-layout) EM verification …

As VLSI technology enters the nanoscale regime, design reliability is becoming increasingly
important. A major design reliability concern arises from electromigration which refers to the …

With the continuous increase of the circuit complexity and the scaling down of the device
size, electromigration (EM) failure in the interconnects has become the determining factor for …

Semiconductor aging and its causes have been well understood, however until recently,
aging has not been a design concern. The expected lifetime of integrated circuit (IC) …

Excessive current density within interconnects is a major concern for IC designers, which if
not effectively mitigated leads to electromigration and electrical overstress. This is …