Plasma-enhanced atomic layer deposition (PEALD) has obtained a prominent position in
the synthesis of nanoscale films with precise growth control. Apart from the well-established …

Retarding field energy analyzers (RFEAs) are used routinely for the measurement of ion
energy distribution functions. By contrast, their ability to measure ion flux densities has been …

As the importance of ion-assisted surface processing based on low-temperature plasma
increases, the monitoring of ion energy impinging into wafer surfaces becomes important …

One of the crucial challenges facing modern microelectronics is to provide plasma surface
treatment at the single atomic level. To minimize defects in the underlying layers, these …

Ion-assisted surface processes are the basis of modern plasma processing. Ion energy
distribution (IED) control is critical for precise material modification, especially in atomic-level …

Inductively coupled plasma (ICP) argon discharge with additional RF bias on the electrode
is studied numerically and compared with experimental data. The role of ion inertia is shown …

Modification of spin-on-deposited porous PMO (periodic mesoporous organosilica) ultralow-
k (ULK) SiCOH films (k= 2.33) containing both methyl terminal and methylene bridging …

Radio-frequency (rf) plasma with additional ionization by an electron beam (EB) is
considered as a possible method for the independent control of plasma density, mean …

Plasma is a special form of the gas phase in which (a part of) the atoms or molecules are
charged as a result of ionization. Plasma has unique properties, such as a high electric …

Thermal and PECVD deposited silicon dioxide and organosilicate low-k materials with
porosity from 24 to 44% and corresponding k values from 2.5 to 2.0 were sputtered in dual …