Resistive random‐access memory (RRAM) stands out as a promising memory technology
due to its ease of operation, high speed, affordability, exceptional stability, and potential to …

A route for the preparation of nanocomposite flexible devices featuring resistive hysteresis,
based on zinc oxide and UV curable polymers, was developed. A new phenomenon …

Redox-based resistive switching devices (ReRAM) are considered key enablers for future
non-volatile memory and logic applications. Functionally enhanced ReRAM devices could …

The fabrication of resistive switching devices is an important technological topic nowadays
because they have been pointed out as the fundamental building block for the future …

This study focuses on the development of a feasible, low-cost, and reliable electrodeposition
technique for metal (Ti and Mn) oxide-based active memristive layers on Ti. The developed …

Not unlike the concern over diminishing fossil fuel, information technology is bringing its own
share of future worries. We chose to look closely into one concern in this paper, namely the …

This article reports on the effect of silver nanoparticles (NPs), used as active fillers, on the
piezoelectric response of polymer composites. In particular, it is demonstrated that the …

Abstract Information technology is approaching the era of artificial intelligence. New
computing architectures are required to cope with the huge amount of data that has to be …

As we are moving towards a more data-centric and energy-consuming world, there is an
increasingly strong need to search for more efficient alternatives in computing memory …

The resistive switching in metal-oxide thin films typically occurs via modulation of the oxygen
content in conductive filaments. For Ta2O5-based resistive switching devices, the two …