Processing methods may be performed to expose a contact region on a semiconductor
substrate. The methods may include selectively removing a first region of a silicon material …

An exemplary system may include a chamber configured to contain a semiconductor
substrate in a processing region of the chamber. The system may include a first remote …

A method of conditioning internal surfaces of a plasma source includes flowing first source
gases into a plasma generation cavity of the plasma source that is enclosed at least in part …

3,937,857 3, 969077 4006047 4, 190488 4.209. 357 4,214,946 4, 232060 4.234. 628
4,265.943 4,340,462 4,341,592 4,361,418 4,361,441 4,364,803 4,368.223 4, 374698 …

Apparatuses including a height-adjustable edge ring, and methods for use thereof are
described herein. In one example, a substrate support assembly includes a height …

Embodiments described herein generally related to a substrate processing apparatus. In
one embodiment, a process kit for a substrate processing chamber disclosed herein. The …

(57) ABSTRACT A method and apparatus for biasing regions of a substrate in a plasma
assisted processing chamber are provided. Biasing of the substrate, or regions thereof …

Embodiments of this disclosure describe an electrode bias-ing scheme that enables
maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at …

Embodiments of this disclosure describe an electrode biasing scheme that enables
maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at …

Embodiments of this disclosure describe an electrode biasing scheme that enables
maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at …