Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective
Power semiconductor devices are fundamental drivers for advances in power electronics,
the technology for electric energy conversion. Power devices based on wide-bandgap …
the technology for electric energy conversion. Power devices based on wide-bandgap …
A review of high-speed GaN power modules: state of the art, challenges, and solutions
Wide bandgap (WBG) devices are a desirable choice for high-density energy conversion
systems. In high-speed hard-switching applications, voltage overshoot across device …
systems. In high-speed hard-switching applications, voltage overshoot across device …
10-kV SiC MOSFET power module with reduced common-mode noise and electric field
CM DiMarino, B Mouawad, CM Johnson… - … on Power Electronics, 2019 - ieeexplore.ieee.org
The advancement of silicon carbide (SiC) power devices with voltage ratings exceeding 10
kV is expected to revolutionize medium-and high-voltage systems. However, present power …
kV is expected to revolutionize medium-and high-voltage systems. However, present power …
A double-side cooled SiC MOSFET power module with sintered-silver interposers: I-design, simulation, fabrication, and performance characterization
Planar, double-side cooled power modules are emerging in electric-drive inverters because
of their low profile, better heat extraction, and lower package parasitic inductances …
of their low profile, better heat extraction, and lower package parasitic inductances …
Design of a 10 kV SiC MOSFET-based high-density, high-efficiency, modular medium-voltage power converter
Simultaneously imposed challenges of high-voltage insulation, high dv/dt, high-switching
frequency, fast protection, and thermal management associated with the adoption of 10 kV …
frequency, fast protection, and thermal management associated with the adoption of 10 kV …
A compact double-sided cooling 650V/30A GaN power module with low parasitic parameters
Compared with silicon and silicon carbide devices, the unique electrical and structural
characteristics of gallium nitride high electron mobility transistors (GaN HEMTs) make them …
characteristics of gallium nitride high electron mobility transistors (GaN HEMTs) make them …
Parasitic capacitive couplings in medium voltage power electronic systems: An overview
Recent developments within the field of medium voltage wide-bandgap semiconductor
devices are drawing attention from both researchers and industries due to the demanding …
devices are drawing attention from both researchers and industries due to the demanding …
Improved double pulse test for accurate dynamic characterization of medium voltage SiC devices
This article presents an improved double pulse test (DPT) for accurate dynamic
characterization of the medium voltage (MV) silicon carbide device. The difference between …
characterization of the medium voltage (MV) silicon carbide device. The difference between …
Graphite-embedded high-performance insulated metal substrate for wide-bandgap power modules
Emerging wide-bandgap (WBG) semiconductor devices such as silicon carbide (SiC) metal-
oxide semiconductor field-effect transistors (MOSFETs) and gallium nitride high-electron …
oxide semiconductor field-effect transistors (MOSFETs) and gallium nitride high-electron …
Diamond semiconductor performances in power electronics applications
G Perez, A Maréchal, G Chicot, P Lefranc… - Diamond and Related …, 2020 - Elsevier
This paper proposes a system-level comparison between diamond and silicon carbide (SiC)
power devices. It highlights the benefits of diamond semiconductors for power electronics …
power devices. It highlights the benefits of diamond semiconductors for power electronics …