Energy-efficient tunneling field-effect transistors for low-power device applications: challenges and opportunities
Conventional field-effect transistors (FETs) have long been considered a fundamental
electronic component for a diverse range of devices. However, nanoelectronic circuits based …
electronic component for a diverse range of devices. However, nanoelectronic circuits based …
[HTML][HTML] A steep switching WSe2 impact ionization field-effect transistor
Abstract The Fermi-Dirac distribution of carriers and the drift-diffusion mode of transport
represent two fundamental barriers towards the reduction of the subthreshold slope (SS) …
represent two fundamental barriers towards the reduction of the subthreshold slope (SS) …
Redox chloride elimination reaction: facile solution route for indium‐free, low‐voltage, and high‐performance transistors
Solution‐processed oxide semiconductor and dielectric thin films have been widely studied
for achieving flexible, high‐performance, and low‐power electronics and circuits. In this …
for achieving flexible, high‐performance, and low‐power electronics and circuits. In this …
Photo-patternable ZnO thin films based on cross-linked zinc acrylate for organic/inorganic hybrid complementary inverters
Complementary inverters consisting of p-type organic and n-type metal oxide
semiconductors have received considerable attention as key elements for realizing low-cost …
semiconductors have received considerable attention as key elements for realizing low-cost …
A 0.2 V micro‐electromechanical switch enabled by a phase transition
Abstract Micro‐electromechanical (MEM) switches, with advantages such as quasi‐zero
leakage current, emerge as attractive candidates for overcoming the physical limits of …
leakage current, emerge as attractive candidates for overcoming the physical limits of …
Low-voltage and high-performance field-effect transistors based on Zn x Sn 1− x O nanofibers with a ZrO x dielectric
Z Wang, Y Meng, Y Cui, C Fan, G Liu, B Shin, D Feng… - Nanoscale, 2018 - pubs.rsc.org
One-dimensional (1D) nanofibers have been considered to be important building blocks for
nano-electronics due to their superior physical and chemical properties. In this report, high …
nano-electronics due to their superior physical and chemical properties. In this report, high …
A steep-switching impact ionization-based threshold switching field-effect transistor
C Kang, H Choi, H Son, T Kang, SM Lee, S Lee - Nanoscale, 2023 - pubs.rsc.org
A steep switching device with a low subthreshold swing (SS) that overcomes the
fundamental Boltzmann limit (kT/q) is required to efficiently process a continuously …
fundamental Boltzmann limit (kT/q) is required to efficiently process a continuously …
Utilizing mechanical adhesion force as a high contact force in a MEMS relay
SB Kim, HW Min, YB Lee, SH Kim, PK Choi… - Sensors and Actuators A …, 2021 - Elsevier
High contact force in a microelectromechanical systems (MEMS) relay is known to be the
most important factor in achieving low contact resistance. Achieving a high contact force in …
most important factor in achieving low contact resistance. Achieving a high contact force in …
A low contact resistance 4-terminal MEMS relay: theoretical analysis, design, and demonstration
YH Yoon, Y Jin, CK Kim, S Hong… - Journal of …, 2018 - ieeexplore.ieee.org
A 4-terminal microelectromechanical systems (MEMS) relay has long been sought for signal
switching applications because it allows de-coupling of the actuation (body and gate) and …
switching applications because it allows de-coupling of the actuation (body and gate) and …
Nanomechanical encoding method using enhanced thermal concentration on a metallic nanobridge
We present a fast, energy-efficient nano-thermomechanical encoding scheme for digital
information storage and retrieval. Digital encoding processes are conducted by the bistable …
information storage and retrieval. Digital encoding processes are conducted by the bistable …