A key material system for opto-and high-power electronics are III-nitrides. Their functionality
can be expanded when bandgap engineering is extended beyond common materials such …

The surface quality of lead halide perovskite crystals can extremely influence their
optoelectronic properties and device performance. Here, we report a surface engineering …

Abstract Knowledge about the temperature dependence of the fundamental band-gap
energy of semiconductors is very important and constitutes the basis for developing …

A series of strained GaAsBi/GaAs multiple quantum well diodes are characterised to assess
the potential of GaAsBi for photovoltaic applications. The devices are compared with …

Abstract We report a GaAs 0.96 Bi 0.04/GaAs multiple quantum well (MQW) light emitting
diode (LED) grown by molecular beam epitaxy using a two-substrate-temperature (TST) …

We present experimental studies on low-temperature (T= 4.2 K) carrier dynamics in (Ga,
In)(Sb, Bi)/GaSb quantum wells (QWs) with the nominal In content of 3.7% and the Bi …

Influence of barrier material and structure on carrier quantum confinement in GaAsBi
quantum wells (QWs) is studied comprehensively. Single-and multi-QW structures were …

Formation of bismuth nanocrystals in GaAsBi layers grown by molecular beam epitaxy at
330° C substrate temperature and post-growth annealed at 750° C is reported. Superlattices …

A detailed understanding of the carrier dynamics and emission characteristics of organic–
inorganic lead halide perovskites is critical for their optoelectronic and energy harvesting …

To determine the band alignment at the GaSb 1-x Bi x/GaSb interface, a set of GaSb 1-x Bi
x/GaSb quantum wells (QWs) of various widths (7, 11, and 15 nm) and contents (Bi≤ 12%) …