Epitaxially grown quantum dot (QD) lasers are emerging as an economical approach to
obtain on-chip light sources. Thanks to the three-dimensional confinement of carriers, QDs …

InAs quantum dots grown on relaxed, metamorphic InGaAs buffers are an important
heterostructure for the realization of devices based on GaAs substrates. In these last 20 …

The unprecedented increase in internet traffic witnessed in the last few years has pushed
the community to explore heterogeneous optical networks, including free-space-optics …

Heteroepitaxy of III–V compound semiconductors on industry standard (001) silicon (Si)
substrates is highly desirable for large-scale electronic and photonic integrated circuits …

Vertical-cavity surface-emitting lasers (VCSELs) have been widely adopted in a variety of
applications in recent years, with even more applications currently under research and …

Group-III-nitride superluminescent diodes (SLDs) are emerging as light sources for white
lighting and visible light communications (VLC) owing to their droop-free, low speckle noise …

We have developed InP-based 1.55-μm lasers epitaxially grown on (001) Si substrates for
photonics integration. To overcome the fundamental material challenges associated with …

Monolithic integration of high-performance semiconductor lasers on silicon enables wafer-
scale optical interconnects within photonic integrated circuits on a silicon manufacturing …

A secure four-level pulse amplitude modulation (PAM-4) based free-space-optics (FSO)
communication system with self-injection-locked quantum dash-laser diode (QD-LD) and …

The mode-locking and noise characteristics of InP/InAs quantum dash (QDash) and
quantum dot (QDot) multi-wavelength lasers, showing identical structural design, operating …