SRAM is the key element used in digital circuits. It is also used as a cache memory in
computers, automatic modern equipment like mobile phones, modern appliances, digital …

In this paper, a reference-voltage self-selected pseudo-differential sensing scheme suitable
for single-ended SRAM is proposed. The proposed sensing scheme can select different …

A 32 Kb dual-port low-voltage SRAM in 28 nm FD-SOI, featuring foundry supplied high-
density 6T bitcells, is presented. Dual-port configurability is realized by a unique dual-rail …

Advances in 7nm and 5nm silicon process nodes push high-performance compute (HPC) to
a new era of technological capabilities and unprecedented performance levels. This paper …

A structure for an integrated circuit is disclosed for storing data. The integrated circuit
includes a memory cell array of bit cells configured in a static random access memory …

The operation of the voltage-mode and current-mode sense amplifiers (VSA and CSA) is
explained in detail. Analytical expressions for offset arising from random FET mismatch are …

The conventional design principle of the finFET offers various constraints that act as an
impediment towards improving ther performance of finFET SRAM. After reviewing existing …

In the past years, we have seen a tremendous increase in small and battery-powered
devices for sensing, wireless communication, data processing, classification, and …

The evolutions in the modern memory units are comeup with FinFET/SRAM which can be
utilized over high scaled computing units and in other devices. Some of the recent systems …

This paper presents low-power and low-energy 8T dual-port SRAM with a novel MSB-based
(most-significant-bit-based) inversion logic for an image processor such a deep-learning …