Important factors in considering compounds for use as precursors in CVD techniques are
discussed. Conventionally, volatility along with precursor purity and clean decomposition to …

Optical emission characteristics of indium arsenide (InAs) quantum wells were studied using
organometallic vapor phase epitaxy (OMVPE). Low growth temperature (< 500° C) and …

We have investigated the growth of InP and InGaAs/InP using TBA and TBP in N2 ambient.
This process eliminates both the explosive H2 and the toxic hydrides as precursors. General …

Very high purity n‐type GaAs epilayers were grown by low pressure metalorganic chemical
vapor deposition using triethylgallium and tertiarybutylarsine (TBA) or arsine (AsH3). Peak …

HIgh quality GaInAs/GaAs/GaInP laser structures were grown by chemical beam epitaxy
using tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) under pulsed conditions …

We report on the complete characterization of a hydride-and hydrogen-free chemical beam
epitaxy (CBE) process for the realization of GaAs/GaInP heterojunction bipolar transistors …

Recent progress on the use of liquid organometallic sources for replacing the group V
compressed gases looks particularly encouraging. We have grown both strained and …

We have demonstrated the feasibility of selective epitaxial growth (SEG) of GaInP using low‐
pressure metal‐organic chemical‐vapor deposition (LPMOCVD) with the combination of …

Significant advances in the room-temperature (RT) continuous-wave (CW) output power of
both type-l quantum-well (QW) active-layer lasers and interband cascade lasers have been …

The authors have achieved low threshold In/sub x/Ga/sub 1-x/As/InP quantum well laser
diodes, grown in a non-hydride metalorganic chemical vapor deposition system at …