The metalorganic vapor phase epitaxial (MOVPE) growth process will be considered by first
examining, individually, each of the four fundamental aspects of the overall reaction:(1) …

The explosive growth of compound semiconductors into the fields of electronic and optical
devices has been due to the development of advances epitaxial growth techniques. These …

Organometallic Vapor-Phase Epitaxy describes the operation of a particular technique for
the production of compound semiconductor materials. It describes how the technique works …

The Handbook of Thin Film Deposition Techniques: Principles, Methods, Equipment and
Applications, Second Edition explores the technology behind the spectacular growth in the …

The metalorganic chemical vapor deposition (MOCVD) of epitaxial III‐V semiconductor
alloys on III‐V substrates is reviewed in detail. The emphasis is placed on both practical and …

ABSTRACT Bi2Sr2CaCu2O8 thin films have been prepared in situ by low pressure
metalorganic chemical vapor deposition using fluorinated 3--diketonate precursors. The …

The growth of AlGaN using organometallic vapor phase epitaxy has been studied as a
function of reactor pressure in a horizontal reactor. At atmospheric pressure, GaN with …

Decomposition of trimethylgallium (TMG) and triethylgallium (TEG) in hydrogen and nitrogen
atmospheres was studied by a quadrupole mass analyzer. The decomposition reactions of …

Metalorganic chemical vapor deposition (MOCVD) epitaxial materials technology for the
growth of compound semiconductors has been developed over the past 60-plus years to …

Magnesium-doped GaAs has been grown by organometallic vapor phase epitaxy (OM-
VPE). Bis (cyclopentadienyl) mag-nesium (Cp 2 Mg) is used as the organometallic precursor …