Electronic transport in n-type modulation-doped AlGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and …
We investigate electronic transport properties of as-grown and annealed n-type modulation-
doped Al 0.15 Ga 0.85 As/GaAs 1− x Bi x (x= 0 and 0.04) quantum well (QW) structures …
doped Al 0.15 Ga 0.85 As/GaAs 1− x Bi x (x= 0 and 0.04) quantum well (QW) structures …
Low-and high-energy photoluminescence from GaSb1− xBix with 0< x≤ 0.042
J Kopaczek, R Kudrawiec, W Linhart… - Applied Physics …, 2014 - iopscience.iop.org
Two photoluminescence (PL) peaks were observed in temperature-dependent PL spectra of
GaSb 1− x Bi x layers with 0< x≤ 0.042. The high-energy (HE) peak was found to be …
GaSb 1− x Bi x layers with 0< x≤ 0.042. The high-energy (HE) peak was found to be …
Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells
MK Shakfa, D Kalincev, X Lu, SR Johnson… - Journal of Applied …, 2013 - pubs.aip.org
Localization effects on the optical properties of GaAs 1− x Bi x/GaAs single quantum wells
(SQWs), with Bi contents ranging from x= 1.1% to 6.0%, are investigated using continuous …
(SQWs), with Bi contents ranging from x= 1.1% to 6.0%, are investigated using continuous …
Quantitative estimation of density of Bi-induced localized states in GaAs1− xBix grown by molecular beam epitaxy
M Yoshimoto, M Itoh, Y Tominaga, K Oe - Journal of crystal growth, 2013 - Elsevier
The density of Bi-induced localized states in GaAs 1− x Bi x was evaluated by measuring the
photoluminescence (PL) properties of p-type MBE-grown GaAs 1− x Bi x with various doping …
photoluminescence (PL) properties of p-type MBE-grown GaAs 1− x Bi x with various doping …
Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment
R Kudrawiec, J Kopaczek, O Delorme… - Journal of Applied …, 2019 - pubs.aip.org
To determine the band alignment at the GaSb 1-x Bi x/GaSb interface, a set of GaSb 1-x Bi
x/GaSb quantum wells (QWs) of various widths (7, 11, and 15 nm) and contents (Bi≤ 12%) …
x/GaSb quantum wells (QWs) of various widths (7, 11, and 15 nm) and contents (Bi≤ 12%) …
Hole diffusivity in GaAsBi alloys measured by a picosecond transient grating technique
S Nargelas, K Jarašiūnas, K Bertulis… - Applied Physics …, 2011 - pubs.aip.org
We applied a time-resolved transient grating technique for investigation of nonequilibrium
carrier dynamics in GaAs 1− x Bi x alloys with x= 0.025–0.063. The observed decrease in …
carrier dynamics in GaAs 1− x Bi x alloys with x= 0.025–0.063. The observed decrease in …
Low-temperature photoluminescence study of exciton recombination in bulk GaAsBi
S Mazzucato, H Lehec, H Carrère, H Makhloufi… - Nanoscale Research …, 2014 - Springer
The exciton recombination processes in a series of elastically strained GaAsBi epilayers are
investigated by means of time-integrated and time-resolved photoluminescence at T= 10 K …
investigated by means of time-integrated and time-resolved photoluminescence at T= 10 K …
Impact of a small change in growth temperature on the tail states of GaAsBi
K Kakuyama, S Hasegawa, H Nishinaka… - Journal of Applied …, 2019 - pubs.aip.org
The influence of growth temperature (T sub) on the tail states of GaAs 1− x Bi x (0≦ x≦
0.05) was studied via its sub-bandgap absorption and photoluminescence (PL) …
0.05) was studied via its sub-bandgap absorption and photoluminescence (PL) …
[HTML][HTML] Polarization dependent photoluminescence and optical anisotropy in CuPtB-ordered dilute GaAs1–xBix alloys
T Paulauskas, B Čechavičius, V Karpus… - Journal of Applied …, 2020 - pubs.aip.org
The GaAs 1–x Bi x semiconductor alloy allows one to achieve large bandgap reduction and
enhanced spin–orbit splitting energy at dilute Bi quantities. The bismide is currently being …
enhanced spin–orbit splitting energy at dilute Bi quantities. The bismide is currently being …
Spin lifetime measurements in GaAsBi thin films
Photoluminescence spectroscopy and Hanle effect measurements are used to investigate
carrier spin dephasing and recombination times in the semiconductor alloy GaAsBi as a …
carrier spin dephasing and recombination times in the semiconductor alloy GaAsBi as a …