Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP
Abstract The free buffer InGaAs/InP structure has been elaborated by Metal Organic Vapor
Phase Epitaxy (MOVPE). High indium content is chosen to reduce the bandgap energy of …
Phase Epitaxy (MOVPE). High indium content is chosen to reduce the bandgap energy of …
Bismuth-induced band-tail states in GaAsBi probed by photoluminescence
Band-tail states in semiconductors reflect the effects of material growth and/or treatment,
affect the performance of optoelectronic applications, and are hence a well-concerned issue …
affect the performance of optoelectronic applications, and are hence a well-concerned issue …
Photoacoustic spectroscopy of absorption edge for GaAsBi/GaAs nanowires grown on Si substrate
SJ Zelewski, J Kopaczek, WM Linhart… - Applied Physics …, 2016 - pubs.aip.org
GaAsBi/GaAs nanowires (NWs) grown on Si substrate and proper reference samples have
been studied by photoacoustic (PA) spectroscopy. It has been shown that PA signal …
been studied by photoacoustic (PA) spectroscopy. It has been shown that PA signal …
Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi‐induced acceptor states
The puzzling electronic and transport properties of the Ga (AsBi) alloy are investigated for a
wide range of Bi‐concentrations (x= 0–10.6%) by means of various experimental techniques …
wide range of Bi‐concentrations (x= 0–10.6%) by means of various experimental techniques …
Thermal annealing effects on the optical and structural properties of (1 0 0) GaAs1− xBix layers grown by molecular beam epitaxy
The effects of long time thermal annealing at 200° C on the optical and structural properties
of GaAs 1− x Bi x alloys were investigated by X-ray diffraction (XRD), field emission …
of GaAs 1− x Bi x alloys were investigated by X-ray diffraction (XRD), field emission …
Optical properties and band bending of InGaAs/GaAsBi/InGaAs type-II quantum well grown by gas source molecular beam epitaxy
W Pan, L Zhang, L Zhu, Y Li, X Chen, X Wu… - Journal of Applied …, 2016 - pubs.aip.org
Photoluminescence (PL) properties of In 0.2 Ga 0.8 As/GaAs 0.96 Bi 0.04/In 0.2 Ga 0.8 As
quantum well (QW) grown on GaAs substrates by gas source molecular beam epitaxy were …
quantum well (QW) grown on GaAs substrates by gas source molecular beam epitaxy were …
Photoluminescence at up to 2.4 μm wavelengths from GaInAsBi/AlInAs quantum wells
R Butkutė, V Pačebutas, B Čechavičius… - Journal of crystal …, 2014 - Elsevier
Abstract 5 nm, 10 nm and 20 nm-thick GaInAsBi quantum wells were grown on the InP: Fe
(100) substrates by molecular beam epitaxy. The top and bottom barriers of quantum …
(100) substrates by molecular beam epitaxy. The top and bottom barriers of quantum …
Bi-induced acceptor level responsible for partial compensation of native free electron density in InP1− xBix dilute bismide alloys
Ł Gelczuk, H Stokowski, J Kopaczek… - Journal of Physics D …, 2016 - iopscience.iop.org
Deep level transient spectroscopy (DLTS) has been applied to study electron and hole traps
in InPBi alloys with 2.2 and 2.4% Bi grown by molecular beam epitaxy. One donor-like trap …
in InPBi alloys with 2.2 and 2.4% Bi grown by molecular beam epitaxy. One donor-like trap …
Optical and spin properties of localized and free excitons in GaBixAs1− x/GaAs multiple quantum wells
MAG Balanta, J Kopaczek, VO Gordo… - Journal of Physics D …, 2016 - iopscience.iop.org
Raman spectroscopy and magneto-photoluminescence measurements under high magnetic
fields were used to investigate the optical and spin properties of GaBiAs/GaAs multiple …
fields were used to investigate the optical and spin properties of GaBiAs/GaAs multiple …
Effect of thermal annealing on the optical and structural properties of (311) B and (001) GaAsBi/GaAs single quantum wells grown by MBE
The effect of Furnace Annealing (FA) and Rapid Thermal annealing (RTA) on the structural
and optical properties of GaAs 1− x Bi x/GaAs single quantum wells grown on (001) and …
and optical properties of GaAs 1− x Bi x/GaAs single quantum wells grown on (001) and …